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Cinterion
®
EMS31-V Hardware Interface Overview
2.2 RF Antenna Interface
18
EMS31_V_HIO_v00.004
2018-02-27
Confidential / Preliminary
Page 15 of 35
2.2
RF Antenna Interface
The RF interface has an impedance of 50
Ω
. EMS31-V RF pads are located on pads 58, 59 and
60 (pad 59 is RF_out pad, and pads 58 and 60 are GND pads). The antenna interface is typi-
cally connected by soldering it directly to the application’s PCB.
The antenna interface is designed to meet signal levels according to 3GPP specification.
EMS31-V is capable of sustaining a 10:1 voltage standing wave ratio (VSWR) mismatch at the
antenna line without any damage, even when transmitting at maximum RF power. Antenna pad
is the antenna reference point (ARP) for EMS31-V. All RF data specified throughout this doc-
ument is related to ARP.
Note that DC blocking caps are needed in case DC is applied.
EMS31-V operates in the following frequency bands:
•
Band 4, AWS (1700/2100 MHz) (LTE HD-FDD)
•
Band 13, 700 MHz (LTE HD-FDD)
The following table provides basic information about RF parameters:
.
Please be aware that, in TS 36.521-1, Table 7.3.5-1, the power level is P
REFSENS
. This has a
fixed relationship with the
RS EPRE
(reference signal energy per resource element), which is:
P
REFSENS
= RS EPRE + 10 * log10(N_RE),
where N_RE is the number of resource elements (12 *[number of RBs]).
Table 4:
RF Antenna interface parameters
Parameter
Conditions
Typical
Unit
Sensitivity
LTE Band 4
-106
1
1. The value is valid for 6RB in all possible BW (5, 10, 15, 20MHz)
dBm
LTE Band 13
-106
dBm
RF Power @ ARP
LTE Band 4
23
2
2. Absolute maximum rating of RF peak power is <27.5 dBm
dBm
LTE Band 13
23
dBm
Receiver return loss in
used band
LTE Band 4
>10
3
3. EMS31-V is HD-FDD, what means that the return loss at RX band could be <5dB during transmission
dB
LTE Band 13
>10
dB