Gan Systems GSP665HPMB-EVBIMS2, Техническое руководство

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GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 6
Please refer to the Evaluation Board/Kit Important Notice on page 22
Table 1 Ordering configuration and part numbers
CONFIGURATION IMS 2 HALF BRIDGE MODULE IMS 2 EVB Mother Board
3 kW Half Bridge QTY 1 - GSP66508HB-EVBIMS2
QTY 1: GSP665HPMB-EVBIMS2
6 kW Half Bridge QTY 1 - GSP66516HB-EVBIMS2
3 kW Full Bridge QTY 2 - GSP66508HB-EVBIMS2
6 kW Full Bridge QTY 2 - GSP66516HB-EVBIMS2
Table 2 Part numbers and Description
PART NUMBER DESCRIPTION GaN E-HEMT
GSP665HPMB-EVBIMS2
Optimized Dual HB Gate Driver Motherboard with
isolated driver and PSU for use with GSP66516HB-
EVBIMS2 or GSP66508HB-EVBIMS2 half bridge boards
N/A
GSP66508HB-EVBIMS2
Optimized IMS 2 Half Bridge based on GS66508B
GaN
PX
® bottom-cooled E-HEMTs
GS66508B
GSP66516HB-EVBIMS2
Optimized IMS 2 Half Bridge based on GS66516B
GaN
PX
® bottom-cooled E-HEMTs
GS66516B
1.2 IMS 2 Evaluation Platform Overview
1.2.1 Technical Description
Using this platform, power designers can evaluate the performance of GaN Systems’ E-HEMTs
(Enhancement mode High Electron Mobility Transistors) in high power, high efficiency applications. The
IMS 2 half bridge power board is populated with GaN Systems
’ GS66516B (bottom-side cooled E-HEMT,
rated at 650 V / 25 mΩ ) or GS66508B (bottom-side cooled E-HEMT, rated at 650 V / 50 mΩ) . The embedded
GaN
PX
® SMD package has the following features:
•
Large power source/thermal pad for improved thermal dissipation.
•
Bottom-side cooled packaging for conventional PCB or advanced IMS/Cu inlay thermal design.
•
Ultra-low inductance for high frequency switching.
a) GS66516B b) GS66508B
Figure 2 - GS66516B and GS66508B GaN
PX
® packaged E-HEMTs