GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021
© 2020 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 22
1.4.1
Gate Driver Circuit
Figure 8 Gate driver circuit
A low cost isolated gate driver circuit is used in the IMS 2 EVB board for each GaN device, which is shown
in Figure 8:
o
U1 is the isolated gate driver (Silicon Labs P/N: Si8271)
o
U2, T1, D1, C6, C7, C8 and U3 are the isolated push-pull power supply for the gate driver;
after the LDO chip U3, the output is divided to +6/-3V to power the gate driver.
o
R1 and R2 are gate turn-on and off resistors.
1.4.2
5V input
The gate driver circuit on the IMS 2 EVB mother board is powered from a 5V DC source, through connector
J2.
1.4.3
Temperature monitoring holes
4 holes are located on the center of 4 GaN E-HEMTs to assist with the temperature monitoring during
operation. A thermal camera can be used to monitor the case temperature through these holes. The
temperature measured at the center of GaN
PX
® package will be close to the T
J
.
NOTE: Thermal performance of the transistors is dependent on a number of factors including circuit
configuration, ambient temperature, airflow, and heatsinking. The user is responsible for monitoring the
temperature of the devices to ensure operation remains within specification.
