Fairchild FSB44104A Скачать руководство пользователя страница 15

AN-9111 

APPLICATION NOTE 

© 2015 Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

Rev. 1.1  

•  6/26/15 

14 

6.  Key Parameter Design Guidance 

For stable operation, there are recommended parameters for 
passive  components  and  bias  conditions,  considering 
operating characteristics of Motion SPM

®

 45 LV series. 

6.1.  Selection of Shunt resistor 

Figure  12  shows  an  example  circuit  of  the  SC  protection 
using  1-shunt  resistor.  The  line  current  on  the  N  side  DC-
link is detected and the protective operation signal is passed 
through  the  RC  filter.  If  the  current  exceeds  the  SC 
reference  level,  all  the  gates  of  the  N-side  three-phase 
MOSFETs  are  switched  to  the  OFF  state  and  the  F

O

  fault 

signal  is  transmitted  to  MCU.  Since  SC  protection  is  non-
repetitive,  MOSFET  operation  should  be  immediately 
halted when the F

O

 fault signal is given. 

V

S

C

SC

Motor

HVIC

        . Level Shift
        . Gate Drive
        . UVLO

LVIC

        . Gate Drive
        . UVLO
        . SCP

R

SHUNT

V

FO

COM

R

F

C

SC

VDC

Short Circuit 

Current (I

SC

)

V

CSC

V

CC

 

Figure 12. 

Short circuit current protection circuit with 

one shunt resistor 

The  value  of  shunt  resistor  is  calculated  by  the  following 
equation. 

 

Maximum SC current trip level : I

SC(max)

=1.5 * I

C

(rated 

current) 

 

SC trip referenced voltage (depends on user selection): 
V

SC

  =  min.  0.027

 

V,  typ.  0.03

 

V,  max.  0.033

 

(Tolerance 10%, depends on system) 

 

Shunt 

resistance 

I

SC(max)

=V

SC(max)

/R

SHUNT(min) 

R

SHUNT(min)

=V

SC(max)

/I

SC(max)

 

 

If the deviation of the shunt resistor is limited below  ± 
1%: 

R

SHUNT(typ)

=R

SHUNT(min)

/0.99,R

SHUNT(max)

=R

SHUNT(typ)

 

1.01 

 

Actual SC trip current level becomes: 

I

SC(typ)

=V

SC(typ)

  /  R

SHUNT(min)

,  I

SC(min)

  =  V

SC(min)

  / 

R

SHUNT(max)

 

 

Inverter output power: 

P

OUT 

      

    

   

   

    

 

where: 

V

O,LL

= Inverter output line to line voltage 

MI = Modulation Index; 

I

RMS

 = Maximum load current of inverter; and 

PF = Power Factor 

 

Average DC current 

I

DC_AVG

 = V

DC_Link

 / (P

out

 

 Eff) 

where: 

Eff = Inverter efficiency 

 

The power rating of shunt resistor is calculated by the 
following equation. 

P

SHUNT

 = (I

2

DC_AVG

R

SHUNT

Margin)/Derating Ratio 

Where; 

R

SHUNT

 = Shunt resistor typical value at T

C

 = 25

°

C  

Derating  Ratio  =  Derating  ratio  of  shunt  resistor  at 
T

SHUNT

 = 100

°

(From datasheet of shunt resistor); and 

Margin = Safety margin (determined by user) 

 

Shunt Resistor Calculation Examples

 

Calculation Conditions: 

 

DUT: FSB44104A 

 

Tolerance of shunt resistor: ±1% 

 

SC Trip Reference Voltage(V

SC

) :  

 

V

SC(min)

  =  0.0297 V,  V

SC(typ)

  =  0.03 V,  V

SC(max)

  = 

0.0303 V 

 

V

SC

  =  Reference  voltage  of  external  comparator 

(refer to the Fig. 3) 

 

Maximum Load Current of Inverter (I

RMS

): 28.3 A

rms

 

 

Maximum  Peak  Load  Current  of  Inverter  (I

C(max)

): 

60 A 

 

Modulation Index(MI) : 0.9 

 

DC Link Voltage(V

DC_Link

): 20 V 

 

Power Factor(PF): 0.8 

 

Inverter Efficiency(Eff): 0.95 

 

Shunt Resistor Value at T

C

 = 25°C (R

SHUNT

): 0.5 mΩ 

 

Derating  Ration  of  Shunt  Resistor  at  T

SHUNT

  = 

100°C: 70% 

 

Safety Margin: 20% 

 

 

 

Содержание FSB44104A

Страница 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Страница 2: ...Outline 7 3 4 Marking Specification 8 4 Product Synopsis 9 4 2 Electrical Characteristic TJ 25 o C unless otherwise specified 10 4 3 Recommended Operating Conditions 12 4 4 Mechanical Characteristics...

Страница 3: ...based power module has much better ruggedness and a larger Safe Operation Area SOA than MOSFET based module or Silicon On Insulator modules The FRFET based power module has a big advantage in light l...

Страница 4: ...ine up Table 1 shows the basic line up Online loss temperature simulation tool Motion Control Design Tool Motion Control Design Tool is recommended to find out the right SPM product for the desired ap...

Страница 5: ...the accomplishment of optimization package size while maintaining outstanding heat dissipation characteristics without compromising the isolation rating In the SPM package technology was developed in...

Страница 6: ...NV Negative DC Link Input 7 NU Negative DC Link Input 8 VFO Fault Output 9 IN UL PWM Input for Low Side U Phase MOSFET Drive 10 IN VL PWM Input for Low Side V Phase MOSFET Drive 11 IN WL PWM Input for...

Страница 7: ...built in MOSFETs They are activated by voltage input signals The terminals are internally connected to a Schmitt trigger circuit composed of 5 V class CMOS The signal logic of these pins is active HI...

Страница 8: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 7 3 3 Package Outline...

Страница 9: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 8 3 4 Marking Specification...

Страница 10: ...calculation value or design factor Table 4 Control Part Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC COM 20 V VBS High Side Control Bias Voltage Applied betwe...

Страница 11: ...VBS 15 V VIN 5 V ID 40 A 3 0 4 1 m VSD Source Drain Diode Forward Voltage VCC VBS 15 V VIN 0 V ISD 40 A 0 8 1 1 V HS tON Switching Times VPN 20 V VCC VBS 15 V ID 40 A VIN 0 V 5 V Inductive Load See Fi...

Страница 12: ...8 Control Part Symbol Parameter Conditions Min Typ Max Unit IQCC Quiescent VCC Supply Current VCC H 15 V IN UH VH WH 0 V VCC H COM 2 75 mA IQBS Quiescent VBS Supply Current VBS 15 V IN UH VH WH 0 V VB...

Страница 13: ...WH COM VCC L COM 13 5 15 0 16 5 VBS High Side Bias Voltage Applied between VB U VS U VB V VS V VB W VS W 13 0 15 0 18 5 V dVCC dt dVBS dt Control Supply Variation 1 1 V s VSEN Voltage for Current Sen...

Страница 14: ...and carrying current The HVIC has an under voltage lockout function to protect the high side MOSFET from insufficient gate driving voltage A timing chart for this protection is shown in Figure 11 A f...

Страница 15: ...03 V max 0 033 V Tolerance 10 depends on system Shunt resistance ISC max VSC max RSHUNT min RSHUNT min VSC max ISC max If the deviation of the shunt resistor is limited below 1 RSHUNT typ RSHUNT min...

Страница 16: ...max 60 A and VREF level is 2 5 V To prevent malfunction it is recommended that an RC filter be inserted at the CSC pin To shut down MOSFETs within 3 s when over current situation occurs a time constan...

Страница 17: ...e HVIC does not drive the high side MOSFET if the VBS voltage drops below a specified voltage refer to the datasheet This function prevents the MOSFET from operating in a high dissipation mode There a...

Страница 18: ...21 and Figure 22 shows waveform initial bootstrap capacitor charging voltage and current Figure 21 Each Part Initial Operating Waveform of Bootstrap Circuit Conditions VDC 20 V VCC 15 V CBS 22 F LS M...

Страница 19: ...ootstrap capacitor If the minimum ON pulse width of low side MOSFET or the minimum OFF pulse width of high side MOSFET is tO the bootstrap capacitor must be charged to increase the voltage by V during...

Страница 20: ...BS CSP15 5V RPF Motor VDC CDCS Gating UH Gating VH Gating WL Gating VL Gating UL CPF M C U RSH Current Sensing RS RS RS RS RS RS RBS DBS RBS DBS LVIC VFO VCC IN UL IN VL IN WL COM OUT UL OUT VL OUT WL...

Страница 21: ...D and Power GND as short as possible Place sunbber capacitor between P and N and closely to terminals Isolation distance between high voltage block and low voltage block should be kept The V IN RC fil...

Страница 22: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 21 Packing Information Figure 26 Packing Information...

Страница 23: ...LICY FAIR HI D PRODU T ARE NOT AUTHORIZED FOR U E A RITI A OMPONENT IN IFE UPPORT DEVI E OR Y TEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION As used h...

Страница 24: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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