SIC63616-(Rev. 1.0) NO. P183
3240-0412
7.3 DC Characteristics
Max.
V
DD
0.2V
DD
0.9V
DD
0.5V
DD
0.9V
DD
0.5V
DD
-0.5
–
1
1
500
15
-5
–
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Min.
0.8V
DD
0
0.5V
DD
0.1V
DD
0.5V
DD
0.1V
DD
–
0.5
-1
-1
100
–
–
5
Condition
P1x, P2x, P4x
∗
1
P1x, P2x, P4x
∗
1
RESET
RESET
P1x, P2x, P4x
∗
2, P0x, RFIN1
P1x, P2x, P4x
∗
2, P0x, RFIN1
V
OH
=0.9V
DD
Pxx, REF1, SEN1, HUD
V
OL
=0.1V
DD
Pxx, REF1, SEN1, HUD
Pxx, RESET, RFIN1
Pxx, REF1, SEN1, HUD
Pxx, RESET
V
IN
=0V, Ta=25°C Pxx, RESET, RFIN1
V
SEGH
=V
C5
-0.1V SEGxx, COMxx
V
SEGL
=V
SS
+0.1V SEGxx, COMxx
Item
High level input voltage
Low level input voltage
High level Schmitt input voltage (1)
Low level Schmitt input voltage (1)
High level Schmitt input voltage (2)
Low level Schmitt input voltage (2)
High level output current
Low level output current
Input leak current
Output leak current
Input pull-down resistance
Input terminal capacitance
Segment/Common output current
∗
1
*2
Unless otherwise specified:
V
DD
=1.6 to 5.5V, V
SS
=0V, Ta=-45 to 85°C
Symbol
V
IH
V
IL
V
T1+
V
T1-
V
T2+
V
T2-
I
OH
I
OL
I
LI
I
LO
R
IN
C
IN
I
SEGH
I
SEGL
Unit
V
V
V
V
V
V
mA
mA
µA
µA
k
Ω
pF
µA
µA
When CMOS level is selected.
When CMOS Schmitt level is selected.
V
DD
0
V
T
+
V
T
-
0
V
IN
(V)
V
OUT
(V)
V
DD
Содержание S1C63616
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