Cypress CY14E256L, Техническое описание

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CY14E256L
Document Number: 001-06968 Rev. *F Page 8 of 18
V
OL
Output LOW Voltage I
OUT
= 8 mA 0.4 V
V
BL
Logic ‘0’ Voltage on HSB
Output I
OUT
= 3 mA 0.4 V
V
CAP
Storage Capacitor Between V
CAP
pin and Vss, 6V rated. 68 µF +20% nom. 54 260 uF
Data Retention and Endurance
Parameter Description Min Unit
DATA
R
Data Retention 100 Years
NV
C
Nonvolatile STORE Operations 1,000 K
Capacitance
In the following table, the capacitance parameters are listed.
[8]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25
°
C, f = 1 MHz,
V
CC
= 0 to 3.0V
5 pF
C
OUT
Output Capacitance 7 pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
[8]
Parameter Description Test Conditions 32-SOIC 32-CDIP Unit
Θ
JA
Thermal Resistance
(Junction to Ambient) Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51. 35.45 TBD
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case) 13.26 TBD
°
C/W
Figure 6. AC Test Loads
AC Test Conditions
DC Electrical Characteristics
Over the operating range (continued)(V
CC
= 4.5V to 5.5V)
[6]
Parameter Description Test Conditions Min Max Unit
5.0V
Output
30 pF
R1 963
Ω
R2
512
Ω
5.0V
Output
5 pF
R1 963
Ω
R2
512
Ω
For Tri-state Specs
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
8. These parameters are guaranteed by design and are not tested.
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