CY14E256L
Document Number: 001-06968 Rev. *F
Page 4 of 18
Hardware STORE (HSB) Operation
The CY14E256L provides the HSB pin for controlling and
acknowledging the STORE operations. The HSB pin is used to
request a hardware STORE cycle. When the HSB pin is driven
LOW, the CY14E256L conditionally initiates a STORE operation
after t
DELAY
. An actual STORE cycle only begins if a WRITE to
the SRAM takes place since the last STORE or RECALL cycle.
The HSB pin also acts as an open drain driver that is internally
driven LOW to indicate a busy condition, while the STORE
(initiated by any means) is in progress. Pull up this pin with an
external 10K ohm resistor to V
CAP
if HSB is used as a driver.
SRAM READ and WRITE operations, that are in progress when
HSB is driven LOW by any means, are given time to complete
before the STORE operation is initiated. After HSB goes LOW,
the CY14E256L continues SRAM operations for t
DELAY
. During
t
DELAY
, multiple SRAM READ operations take place. If a WRITE
is in progress when HSB is pulled LOW, it allows a time, t
DELAY
to complete. However, any SRAM WRITE cycles requested after
HSB goes LOW are inhibited until HSB returns HIGH.
During any STORE operation, regardless of how it is initiated,
the CY14E256L continues to drive the HSB pin LOW, releasing
it only when the STORE is complete. After completing the
STORE operation, the CY14E256L remains disabled until the
HSB pin returns HIGH.
If HSB is not used, it is left unconnected.
Hardware RECALL (Power Up)
During power up or after any low power condition (V
CC
<
V
RESET
), an internal RECALL request is latched. When V
CC
once again exceeds the sense voltage of V
SWITCH
, a RECALL
cycle is automatically initiated and takes t
HRECALL
to complete.
If the CY14E256L is in a WRITE
state at the end of power up
RECALL, the SRAM
data is corrupted. To help avoid this
situation, a 10 Kohm resistor is connected either between WE
and system V
CC
or between CE and system V
CC
.
Software STORE
Data is transferred from the SRAM to the nonvolatile memory by
a software address sequence. The CY14E256L software
STORE cycle is initiated by executing sequential CE controlled
READ cycles from six specific address locations in exact order.
During the STORE cycle, an erase of the previous nonvolatile
data is first performed followed by a program of the nonvolatile
elements. When a STORE cycle is initiated, input and output are
disabled until the cycle is completed.
Because a sequence of READs from specific addresses is used
for STORE initiation, it is important that no other READ or WRITE
accesses intervene in the sequence. If they intervene, the
sequence is aborted and no STORE or RECALL takes place.
To initiate the software STORE cycle, the following READ
sequence is performed:
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0FC0, Initiate STORE cycle
The software sequence is clocked with CE controlled READs.
When the sixth address in the sequence is entered, the STORE
cycle commences and the chip is disabled. It is important that
READ cycles and not WRITE cycles are used in the sequence.
It is not necessary that OE is LOW for a valid sequence. After the
t
STORE
cycle time is fulfilled, the SRAM is again activated for
READ and WRITE operation.
Software RECALL
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A software RECALL cycle is
initiated with a sequence of READ operations in a manner similar
to the software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE controlled READ operations is
performed:
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0C63, Initiate RECALL cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared, and then the nonvolatile information is transferred into
the SRAM cells. After the t
RECALL
cycle time, the SRAM is once
again ready for READ and WRITE operations. The RECALL
operation does not alter the data in the nonvolatile elements. The
nonvolatile data can be recalled an unlimited number of times.
Figure 3. AutoStore Inhibit Mode
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