CY14B101L
Document Number: 001-06400 Rev. *I
Page 8 of 18
Data Retention and Endurance
Parameter
Description
Min
Unit
DATA
R
Data Retention at 55
°
C
20
Years
NV
C
Nonvolatile STORE Operations
200
K
Capacitance
In the following table, the capacitance parameters are listed.
[6]
Parameter
Description
Test Conditions
Max
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 0 to 3.0V
7
pF
C
OUT
Output Capacitance
7
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
[6]
Parameter
Description
Test Conditions
32-SOIC
48-SSOP
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
33.64
32.9
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
13.6
16.35
°
C/W
Figure 4. AC Test Loads
AC Test Conditions
3.0V
Output
30 pF
R1 577
Ω
R2
789
Ω
3.0V
Output
5 pF
R1 577
Ω
R2
789
Ω
For Tri-state Specs
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% to 90%) ...................... <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
6. These parameters are guaranteed by design and are not tested.
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