Cypress Semiconductor NoBL CY7C1352G, Техническое описание

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CY7C1352G
Document #: 38-05514 Rev. *D Page 7 of 12
I
SB4
Automatic CE
Power-down
Current—TTL Inputs V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
All speeds 45 mA
Capacitance
[11]
Parameter Description Test Conditions
100 TQFP
Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V,
V
DDQ
= 3.3V
5 pF
C
CLK
Clock Input Capacitance 5 pF
C
I/O
Input/Output Capacitance 5 pF
Thermal Resistance
[11]
Parameter Description Test Conditions
100 TQFP
Package Unit
Θ
JA
Thermal Resistance
(Junction to Ambient) Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51. 30.32 °C/W
Θ
JC
Thermal Resistance
(Junction to Case) 6.85 °C/W
AC Test Loads and Waveforms
Note:
11. Tested initially and after any design or process changes that may affect these parameters.
Electrical Characteristics
Over the Operating Range
[9, 10]
(continued)
Parameter Description Test Conditions Min. Max. Unit
1ns
OUTPUT
R = 317
Ω
R = 351
Ω
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Ω
Z
0
= 50
Ω
V
T
= 1.5V
3.3V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
OUTPUT
R = 1667
Ω
R = 1538
Ω
5 pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
R
L
= 50
Ω
Z
0
= 50
Ω
V
T
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
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