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4-Mbit (256K x 18) Pipelined SRAM with

NoBL™ Architecture

CY7C1352G

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05514 Rev. *D

 Revised July 4, 2006

Features

• Pin compatible and functionally equivalent to ZBT™ 

devices 

• Internally self-timed output buffer control to eliminate 

the need to use OE

• Byte Write capability

• 256K x 18 common I/O architecture 

• 3.3V core power supply (V

DD

)

• 2.5V/3.3V I/O power supply (V

DDQ

)

• Fast clock-to-output times 

— 2.6 ns (for 250-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous output enable (OE)

• Available in lead-free 100-Pin TQFP package

• Burst Capability—linear or interleaved burst order

• ZZ” Sleep Mode Option and Stop Clock option

Functional Description

[1]

The CY7C1352G is a 3.3V, 256K x 18 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1352G is equipped with the advanced
No Bus Latency™ (NoBL™) logic required to enable consec-
utive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of the SRAM, especially in systems that require
frequent Write/Read transitions. 

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which, when deasserted, suspends operation and extends the
previous clock cycle. Maximum access delay from the clock
rise is 2.6 ns (250-MHz device).

Write operations are controlled by the two Byte Write Select
(BW

[A:B]

) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.

 

Note: 

1. For best-practices recommendations, please refer to the Cypress application note 

System Design Guidelines 

on www.cypress.com.

A0, A1, A

C

MODE

BW

A

BW

B

WE

CE1
CE2
CE3

OE

READ LOGIC

DQs
DQP

A

DQP

B

D

A

T

A

S

T

E

E

R

I

N

G

O

U

T

P

U

T

B

U

F

F

E

R

S

MEMORY

ARRAY

E

E

INPUT

REGISTER 0

ADDRESS

REGISTER 0

WRITE ADDRESS

REGISTER 1

WRITE ADDRESS

REGISTER 2

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

BURST

LOGIC

A0'

A1'

D1
D0

Q1
Q0

A0

A1

C

ADV/LD

ADV/LD

E

INPUT

REGISTER 1

S

E

N

S

E

A

M

P

S

O

U

T

P

U

T

R

E

G

I

S

T

E

R

S

E

CLK

CEN

WRITE

DRIVERS

ZZ

Sleep

Control

Logic Block Diagram

[+] Feedback 

Содержание NoBL CY7C1352G

Страница 1: ...t Write Read transitions All synchronous inputs pass through input registers controlled by the rising edge of the clock All data outputs pass through output registers controlled by the rising edge of the clock The clock input is qualified by the Clock Enable CEN signal which when deasserted suspends operation and extends the previous clock cycle Maximum access delay from the clock rise is 2 6 ns 2...

Страница 2: ...A DQA NC NC VSS VDDQ NC NC NC NC NC NC VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK WE CEN OE A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 6...

Страница 3: ...quence during the first clock when emerging from a deselected state when the device has been deselected CEN Input Synchronous Clock Enable Input active LOW When asserted LOW the Clock signal is recognized by the SRAM When deasserted HIGH the Clock signal is masked Since deasserting CEN does not deselect the device CEN can be used to extend the previous cycle when required ZZ Input Asynchronous ZZ ...

Страница 4: ...ap around when incremented sufficiently A HIGH input on ADV LD will increment the internal burst counter regardless of the state of chip enables inputs or WE WE is latched at the beginning of a burst cycle Therefore the type of access Read or Write is maintained throughout the burst sequence Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock ris...

Страница 5: ... Begin Burst External L L L L L X L L H Data In D Write Cycle Continue Burst Next X L H X L X L L H Data In D NOP WRITE ABORT Begin Burst None L L L L H X L L H Tri State WRITE ABORT Continue Burst Next X L H X H X L L H Tri State IGNORE CLOCK EDGE Stall Current X L X X X X H L H SNOOZE MODE None X H X X X X X X Tri State Truth Table for Read Write 2 3 Function WE BWB BWA Read H X X Write No bytes...

Страница 6: ... I O 1 7 VDD 0 3V V VIL Input LOW Voltage 9 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 µA Input Current of MODE Input VSS 30 µA Input VDD 5 µA Input Current of ZZ Input VSS 5 µA Input VDD 30 µA IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 µA IDD VDD Operating Supply Current VDD Max IOUT 0 mA f fMAX 1 tCYC 4 ns cycle 250 M...

Страница 7: ...andard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W ΘJC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Note 11 Tested initially and after any design or process changes that may affect these parameters Electrical Characteristics Over the Operating Range 9 10 continued Parameter Description Test Conditions Min Max Unit 1ns OUTPUT R 31...

Страница 8: ...5 ns Hold Times tAH Address Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tALH ADV LD Hold after CLK Rise 0 3 0 5 0 5 0 5 ns tWEH GW BW A B Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tCENH CEN Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tDH Data Input Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tCEH Chip Enable Hold After CLK Rise 0 3 0 5 0 5 0 5 ns Notes 12 This part has a voltage regulator internally tpower is the t...

Страница 9: ...nce is determined by the status of the MODE 0 Linear 1 Interleaved Burst operations are optional WRITE D A1 1 2 3 4 5 6 7 8 9 CLK tCYC tCL tCH 10 CE tCEH tCES WE CEN tCENH tCENS BW A B ADV LD tAH tAS ADDRESS A1 A2 A3 A4 A5 A6 A7 tDH tDS Data In Out DQ tCLZ D A1 D A2 D A5 Q A4 Q A3 D A2 1 tDOH tCHZ tCO WRITE D A2 BURST WRITE D A2 1 READ Q A3 READ Q A4 BURST READ Q A4 1 WRITE D A5 READ Q A6 WRITE D ...

Страница 10: ...ode See cycle description table for all possible signal conditions to deselect the device 23 DQs are in high Z when exiting ZZ sleep mode Switching Waveforms continued READ Q A3 4 5 6 7 8 9 10 CLK CE WE CEN BW A B ADV LD ADDRESS A3 A4 A5 D A4 Data In Out DQ A1 Q A5 WRITE D A4 STALL WRITE D A1 1 2 3 READ Q A2 STALL NOP READ Q A5 DESELECT CONTINUE DESELECT DON T CARE UNDEFINED tCHZ A2 D A1 Q A2 Q A3...

Страница 11: ... Package Type Operating Range 133 CY7C1352G 133AXC 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free Commercial CY7C1352G 133AXI Industrial 166 CY7C1352G 166AXC 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free Commercial CY7C1352G 166AXI Industrial 200 CY7C1352G 200AXC 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free Commercial CY7C1352G 200AXI Industria...

Страница 12: ...n the Thermal Resis tance table Added lead free product information for 119 BGA Updated the Ordering Information by shading and unshading MPNs as per avail ability C 419256 See ECN RXU Converted from Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page 1 from 3901 North First Street to 198 Champion Court Modified test condition from VIH VDD to VIH VDD Modified test con...

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