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CY7C1416AV18, CY7C1427AV18
CY7C1418AV18, CY7C1420AV18

Document Number: 38-05616 Rev. *F

Page 9 of 31

Depth Expansion

Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V

SS 

to allow the SRAM to adjust its output

driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM, The allowable
range of RQ to guarantee impedance matching with a tolerance
of ± 15% is between 175

Ω

 and 350

Ω

with V

DDQ

= 1.5V.  The

output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.

Echo Clocks

Echo clocks are provided on the DDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the

DDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
synchronized to the output clock of the DDR-II. In the single clock
mode, CQ is generated with respect to K, and CQ is generated
with respect to K. The timings for the echo clocks is shown in the
AC Timing Table.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL is locked after 1024 cycles of stable clock. The DLL can also
be reset by slowing or stopping the input clock K and K for a
minimum of 30 ns. However, it is not necessary to reset the DLL
to lock to the desired frequency. The DLL automatically locks
1024 clock cycles after a stable clock is presented. The DLL may
be disabled by applying ground to the DOFF pin. For information
refer to the application note 

AN5062, DLL Considerations in

QDRII/DDRII/QDRII+/DDRII+

.

Application Example

Figure 1

 shows two DDR-II used in an application.

Figure 1.  Application Example

Vterm = 0.75V

Vterm = 0.75V

R = 50

ohms

R = 250

ohms

LD#

C C#

R/W#

DQ
     A

K

LD#

C C#

R/W#

DQ
    A

K

SRAM#1

SRAM#2

R

 = 250ohms

BUS

MASTER

(CPU

or

ASIC)

DQ

Addresses

Cycle Start#

R/W#

Return CLK

Source CLK

Return CLK#

Source CLK#

Echo Clock1/Echo Clock#1
Echo Clock2/Echo Clock#2

ZQ

CQ/CQ#

K#

ZQ

CQ/CQ#

K#

[+] Feedback 

Содержание CY7C1416AV18

Страница 1: ...es of the input K clock Write data is registered on the rising edges of both K and K Read data is driven on the rising edges of C and C if provided or on the rising edge of K and K if C C are not prov...

Страница 2: ...egister Read Add Decode Read Data Reg R W Output Logic Reg Reg Reg 8 16 8 NWS 1 0 VREF Write Add Decode 8 21 C C 8 LD Control R W DOFF 2M x 8 Array 2M x 8 Array 8 DQ 7 0 8 CQ CQ Write Reg Write Reg CL...

Страница 3: ...R W Output Logic Reg Reg Reg 18 36 18 BWS 1 0 VREF Write Add Decode 18 21 C C 18 LD Control Burst Logic A0 A 20 1 R W DOFF 1M x 18 Array 1M x 18 Array 20 18 DQ 17 0 18 CQ CQ Write Reg Write Reg CLK A...

Страница 4: ...DDQ VSS VSS VSS VDDQ NC NC DQ0 M NC NC NC VSS VSS VSS VSS VSS NC NC NC N NC NC NC VSS A A A VSS NC NC NC P NC NC DQ7 A A C A A NC NC NC R TDO TCK A A A C A A A TMS TDI CY7C1427AV18 4M x 9 1 2 3 4 5 6...

Страница 5: ...A A NC NC DQ0 R TDO TCK A A A C A A A TMS TDI CY7C1420AV18 1M x 36 1 2 3 4 5 6 7 8 9 10 11 A CQ NC 144M A R W BWS2 K BWS1 LD A NC 72M CQ B NC DQ27 DQ18 A BWS3 K BWS0 A NC NC DQ8 C NC NC DQ28 VSS A A0...

Страница 6: ...A0 Input Synchronous Address Inputs These address inputs are multiplexed for both read and write operations Internally the device is organized as 4M x 8 2 arrays each of 2M x 8 for CY7C1416AV18 4M x...

Страница 7: ...ed between ZQ and ground Alternatively connect this pin directly to VDDQ which enables the minimum impedance mode This pin cannot be connected directly to GND or left unconnected DOFF Input DLL Turn O...

Страница 8: ...the address in a linear fashion On the following K clock rise the data presented to D 17 0 is latched and stored into the 18 bit write data register provided BWS 1 0 are both asserted active On the s...

Страница 9: ...to the output clock of the DDR II In the single clock mode CQ is generated with respect to K and CQ is generated with respect to K The timings for the echo clocks is shown in the AC Timing Table DLL T...

Страница 10: ...yte D 8 0 is written into the device D 17 9 remains unaltered H L L H During the data portion of a write sequence CY7C1416AV18 only the upper nibble D 7 4 is written into the device D 3 0 remains unal...

Страница 11: ...ten into the device D 35 9 remains unaltered L H H H L H During the Data portion of a write sequence only the lower byte D 8 0 is written into the device D 35 9 remains unaltered H L H H L H During th...

Страница 12: ...ing edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP...

Страница 13: ...ary scan register After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD...

Страница 14: ...ontroller follows 9 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 SELECT IR S...

Страница 15: ...HIGH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 108 0 1 2 In...

Страница 16: ...tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions F...

Страница 17: ...nstruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TD...

Страница 18: ...7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P...

Страница 19: ...ock K K for 1024 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at frequencies...

Страница 20: ...V VOH Output HIGH Voltage Note 16 VDDQ 2 0 12 VDDQ 2 0 12 V VOL Output LOW Voltage Note 17 VDDQ 2 0 12 VDDQ 2 0 12 V VOH LOW Output HIGH Voltage IOH 0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW O...

Страница 21: ...atic 300MHz x8 345 mA x9 345 x18 360 x36 400 278MHz x8 325 mA x9 330 x18 345 x36 370 250MHz x8 320 mA x9 320 x18 330 x36 350 200MHz x8 300 mA x9 300 x18 300 x36 315 167MHz x8 285 mA x9 285 x18 290 x36...

Страница 22: ...e Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 17 2 C W JC Thermal Resistance Junction to Case 3 2 C W...

Страница 23: ...up to K Clock Rise LD R W 0 4 0 4 0 5 0 6 0 7 ns tSCDDR tIVKH Double Data Rate Control Setup to Clock K K Rise BWS0 BWS1 BWS2 BWS3 0 3 0 3 0 35 0 4 0 5 ns tSD 23 tDVKH D X 0 Setup to Clock K K Rise 0...

Страница 24: ...CHQZ Clock C C Rise to High Z Active to High Z 24 25 0 45 0 45 0 45 0 45 0 50 ns tCLZ tCHQX1 Clock C C Rise to Low Z 24 25 0 4 5 0 4 5 0 4 5 0 4 5 0 5 0 ns DLL Timing tKC Var tKC Var Clock Phase Jitte...

Страница 25: ...tKH tKHKH tKL tCYC A0 D20 D21 D30 D31 Q00 Q11 Q01 Q10 A1 A2 A3 A4 Q41 tCCQO tCQOH tCCQO tCQOH tKL tCYC K K LD R W A DQ C C CQ CQ SA tKH tKHKH tCQD tCQDOH Notes 26 Q00 refers to output from address A0...

Страница 26: ...ll Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1427AV18 300BZI CY7C1418AV18 300BZI CY7C1420AV18 300BZI CY7C1416AV18 300BZXI 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm...

Страница 27: ...18 250BZXI 200 CY7C1416AV18 200BZC 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Commercial CY7C1427AV18 200BZC CY7C1418AV18 200BZC CY7C1420AV18 200BZC CY7C1416AV18 200BZXC 51 85195 16...

Страница 28: ...AV18 167BZXC CY7C1416AV18 167BZI 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1427AV18 167BZI CY7C1418AV18 167BZI CY7C1420AV18 167BZI CY7C1416AV18 167BZXI 51 85195 165...

Страница 29: ...8AV18 CY7C1420AV18 Document Number 38 05616 Rev F Page 29 of 31 Package Diagram Figure 6 165 ball FBGA 15 x 17 x 1 4 mm 51 85195 0 2 2 8 8 8 3 4 0 0 2 2 4 0 6 7 44 6 7 0 2 0 2 3 2 0 490 3 2 3 3 4 3 0...

Страница 30: ...h First Street to 198 Champion Court Added Power up sequence and Wave form on page 19 Added Footnotes 13 14 15 on page 19 Replaced Three state with Tri state Changed the description of IX from Input L...

Страница 31: ...ed above is prohibited without the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO T...

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