Cypress Semiconductor CY7C1346H, Техническое описание

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CY7C1346H
Document #: 38-05672 Rev. *B Page 10 of 16
Switching Characteristics
Over the Operating Range
[11, 12]
Parameter Description
-166
Unit Min. Max.
t
POWER
V
DD
(Typical) to the First Access
[13]
1 ms
Clock
t
CYC
Clock Cycle Time 6.0 ns
t
CH
Clock HIGH 2.5 ns
t
CL
Clock LOW 2.5 ns
Output Times
t
CO
Data Output Valid after CLK Rise 3.5 ns
t
DOH
Data Output Hold after CLK Rise 1.5 ns
t
CLZ
Clock to Low-Z
[14, 15, 16]
0 ns
t
CHZ
Clock to High-Z
[14, 15, 16]
3.5 ns
t
OEV
OE LOW to Output Valid 3.5 ns
t
OELZ
OE LOW to Output Low-Z
[14, 15, 16]
0 ns
t
OEHZ
OE HIGH to Output High-Z
[14, 15, 16]
3.5 ns
Set-up Times
t
AS
Address Set-up before CLK Rise 1.5 ns
t
ADS
ADSC, ADSP Set-up before CLK Rise 1.5 ns
t
ADVS
ADV Set-up before CLK Rise 1.5 ns
t
WES
GW, BWE, BW
[A:D]
Set-up before CLK Rise 1.5 ns
t
DS
Data Input Set-up before CLK Rise 1.5 ns
t
CES
Chip Enable Set-Up before CLK Rise 1.5 ns
Hold Times
t
AH
Address Hold after CLK Rise 0.5 ns
t
ADH
ADSP, ADSC Hold after CLK Rise 0.5 ns
t
ADVH
ADV Hold after CLK Rise 0.5 ns
t
WEH
GW, BWE, BW
[A:D]
Hold after CLK Rise 0.5 ns
t
DH
Data Input Hold after CLK Rise 0.5 ns
t
CEH
Chip Enable Hold after CLK Rise 0.5 ns
Notes:
11. Timing reference level is 1.5V when V
DDQ
= 3.3V and 1.25V when V
DDQ
= 2.5V.
12. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
13. This part has a voltage regulator internally; t
POWER
is the time that the power needs to be supplied above V
DD
(minimum) initially before a Read or Write operation
can be initiated.
14. t
CHZ
, t
CLZ
, t
OELZ
, and t
OEHZ
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
15. At any given voltage and temperature, t
OEHZ
is less than t
OELZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
16. This parameter is sampled and not 100% tested.
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