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CY7C1324H

Document #: 001-00208 Rev. *B

Page 3 of 15

Pin Definitions 

Name

I/O

Description

A0, A1, A

Input-

Synchronous

Address Inputs used to select one of the 128K address location

s. Sampled at the rising 

edge of the CLK if ADSP or ADSC is active LOW, and CE

1

,

 

CE

2

, and

 

CE

are sampled active. 

A

[1:0]

 feed the 2-bit counter.

BW

A,

BW

B

Input-

Synchronous

Byte Write Select Inputs, active LOW

. Qualified with BWE to conduct Byte Writes to the 

SRAM. Sampled on the rising edge of CLK.

GW

Input-

Synchronous

Global Write Enable Input, active LOW

. When asserted LOW on the rising edge of CLK, a 

global Write is conducted (ALL bytes are written, regardless of the values on BW

[A:B]

 and BWE).

BWE

Input-

Synchronous

Byte Write Enable Input, active LOW

. Sampled on the rising edge of CLK. This signal must 

be asserted LOW to conduct a Byte Write.

CLK

Input-Clock

Clock Input

. Used to capture all synchronous inputs to the device. Also used to increment the 

burst counter when ADV is asserted LOW, during a burst operation.

CE

1

Input-

Synchronous

Chip Enable 1 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction 

with CE

2

 and CE

3

 to select/deselect the device. ADSP is ignored if CE

1

 is HIGH. CE

1

 is sampled 

only when a new external address is loaded.

CE

2

Input-

Synchronous

Chip Enable 2 Input, active HIGH

. Sampled on the rising edge of CLK. Used in conjunction 

with CE

1

 and CE

3

 to select/deselect the device. CE

is sampled only when a new external 

address is loaded.

CE

3

Input-

Synchronous

Chip Enable 3 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction 

with CE

and

 

CE

2

 to select/deselect the device. CE

3

 is sampled only when a new external 

address is loaded. 

OE

Input-

Asynchronous

Output Enable, asynchronous input, active LOW

. Controls the direction of the I/O pins. 

When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, 
and act as input data pins. OE is masked during the first clock of a Read cycle when emerging 
from a deselected state. 

ADV

Input-

Synchronous

Advance Input signal, sampled on the rising edge of CLK

. When asserted, it automatically 

increments the address in a burst cycle.

ADSP

Input-

Synchronous

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, addresses presented to the device are captured in the address registers.
A

[1:0]

 are also loaded into the burst counter. When ADSP and ADSC are both asserted,

only ADSP is recognized. ASDP is ignored when CE

1

 is deasserted HIGH

ADSC

Input-

Synchronous

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, addresses presented to the device are captured in the address registers.
A

[1:0]

 are also loaded into the burst counter. When ADSP and ADSC are both asserted,

only ADSP is recognized.

ZZ

Input-

Asynchronous

ZZ “sleep” Input, active HIGH

. When asserted HIGH places the device in a non-time-critical 

“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or 
left floating. ZZ pin has an internal pull-down.

DQs
DQP

A, 

DQP

B

I/O-

Synchronous

Bidirectional Data I/O Lines

. As inputs, they feed into an on-chip data register that is triggered 

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location 
specified by the addresses presented during the previous clock rise of the Read cycle. The 
direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. 
When HIGH, DQs and DQP

[A:B]

 are placed in a tri-state condition.

V

DD

Power 

Supply

Power supply inputs to the core of the device

.

V

SS

Ground

Ground for the device

V

DDQ

I/O Power 

Supply

Power supply for the I/O circuitry

MODE

Input-

Static

Selects Burst Order

. When tied to GND selects linear burst sequence. When tied to V

DD

 or 

left floating selects interleaved burst sequence. This is a strap pin and should remain static 
during device operation. Mode Pin has an internal pull-up.

NC

No Connects

. Not Internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M, and 

1G are address expansion pins and are not internally connected to the die.

[+] Feedback 

Содержание CY7C1324H

Страница 1: ...Burst Control inputs ADSC ADSP and ADV Write Enables BW A B and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1324H allows either interleaved or linea...

Страница 2: ...C VSS VDDQ NC NC NC NC NC NC VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSP A...

Страница 3: ...le when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK When asserted it automatically increments the address in a burst cycle ADSP Input...

Страница 4: ...ce Byte Writes are allowed During Byte Writes BWA controls DQA and BWB controls DQB All I Os are tri stated during a Byte Write Since this is a common I O device the asynchronous OE input signal must...

Страница 5: ...ontinue Burst Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X...

Страница 6: ...001 00208 Rev B Page 6 of 15 Truth Table for Read Write 2 3 Function GW BWE BWB BWA Read H H X X Read H L H H Write Byte A DQPA H L H L Write Byte B DQPB H L L H Write All Bytes H L L L Write All Byte...

Страница 7: ...Voltage for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V VIL Input LOW Voltage 6 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Cu...

Страница 8: ...llow standard test methods and proce dures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Notes 8 Tested initially...

Страница 9: ...CLK Rise 0 5 ns tWEH GW BWE BW A B Hold after CLK Rise 0 5 ns tADVH ADV Hold after CLK Rise 0 5 ns tDH Data Input Hold after CLK Rise 0 5 ns tCEH Chip Enable Hold after CLK Rise 0 5 ns Notes 9 Timing...

Страница 10: ...CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial...

Страница 11: ...ESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS tWEH...

Страница 12: ...cle is performed 18 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1 Q A4 2...

Страница 13: ...n entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 20 DQs are in High Z when exiting ZZ sleep mode Timing Diagrams continued t ZZ I SUPPLY CLK ZZ...

Страница 14: ...a trademark of Intel Corporation All product and company names mentioned in this document may be the trademarks of their respective holders Ordering Information Not all of the speed package and tempe...

Страница 15: ...r Corporation on Page 1 from 3901 North First Street to 198 Champion Court Removed 100 MHz Speed bin Changed Three State to Tri State Modified Input Load to Input Leakage Current except ZZ and MODE in...

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