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CY7C1324H

Document #: 001-00208 Rev. *B

Page 9 of 15

 

Switching Characteristics 

Over the Operating Range

[9, 10]

Parameter

Description

-133 

Unit

Min.

Max.

t

POWER

V

DD

(Typical) to the First Access

[11]

1

ms

Clock

t

CYC

Clock Cycle Time

7.5

ns

t

CH

Clock HIGH

2.5

ns

t

CL

Clock LOW

2.5

ns

Output Times

t

CDV

Data Output Valid after CLK Rise

6.5

ns

t

DOH

Data Output Hold after CLK Rise

2.0

ns

t

CLZ

Clock to Low-Z

[12, 13, 14]

0

ns

t

CHZ

Clock to High-Z

[12, 13, 14]

3.5

ns

t

OEV

OE LOW to Output Valid

3.5

ns

t

OELZ

OE LOW to Output Low-Z

[12, 13, 14]

0

ns

t

OEHZ

OE HIGH to Output High-Z

[12, 13, 14]

3.5

ns

Set-up Times

t

AS

Address Set-up before CLK Rise

1.5

ns

t

ADS

ADSP, ADSC Set-up before CLK Rise

1.5

ns

t

ADVS

ADV Set-up before CLK Rise

1.5

ns

t

WES

GW, BWE, BW

[A:B]

 Set-up before CLK Rise

1.5

ns

t

DS

Data Input Set-up before CLK Rise

1.5

ns

t

CES

Chip Enable Set-up

1.5

ns

Hold Times

t

AH

Address Hold after CLK Rise

0.5

ns

t

ADH

ADSP, ADSC Hold after CLK Rise

0.5

ns

t

WEH

GW, BWE, BW

[A:B]

 Hold after CLK Rise

0.5

ns

t

ADVH

ADV Hold after CLK Rise

0.5

ns

t

DH

Data Input Hold after CLK Rise

0.5

ns

t

CEH

Chip Enable Hold after CLK Rise

0.5

ns

Notes:

9. Timing reference level is 1.5V when V

DDQ

 = 3.3V and 1.25V when V

DDQ 

= 2.5V

10. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
11. This part has a voltage regulator internally; t

POWER

 is the time that the power needs to be supplied above V

DD

(minimum) initially before a Read or Write operation 

can be initiated.

12. t

CHZ

, t

CLZ

, t

OELZ

, and t

OEHZ

 are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

13. At any given voltage and temperature, t

OEHZ

 is less than t

OELZ

 and t

CHZ

 is less than t

CLZ

 to eliminate bus contention between SRAMs when sharing the same 

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed 
to achieve High-Z prior to Low-Z under the same system conditions.

14. This parameter is sampled and not 100% tested.

[+] Feedback 

Содержание CY7C1324H

Страница 1: ...Burst Control inputs ADSC ADSP and ADV Write Enables BW A B and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1324H allows either interleaved or linea...

Страница 2: ...C VSS VDDQ NC NC NC NC NC NC VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSP A...

Страница 3: ...le when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK When asserted it automatically increments the address in a burst cycle ADSP Input...

Страница 4: ...ce Byte Writes are allowed During Byte Writes BWA controls DQA and BWB controls DQB All I Os are tri stated during a Byte Write Since this is a common I O device the asynchronous OE input signal must...

Страница 5: ...ontinue Burst Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X...

Страница 6: ...001 00208 Rev B Page 6 of 15 Truth Table for Read Write 2 3 Function GW BWE BWB BWA Read H H X X Read H L H H Write Byte A DQPA H L H L Write Byte B DQPB H L L H Write All Bytes H L L L Write All Byte...

Страница 7: ...Voltage for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V VIL Input LOW Voltage 6 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Cu...

Страница 8: ...llow standard test methods and proce dures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Notes 8 Tested initially...

Страница 9: ...CLK Rise 0 5 ns tWEH GW BWE BW A B Hold after CLK Rise 0 5 ns tADVH ADV Hold after CLK Rise 0 5 ns tDH Data Input Hold after CLK Rise 0 5 ns tCEH Chip Enable Hold after CLK Rise 0 5 ns Notes 9 Timing...

Страница 10: ...CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial...

Страница 11: ...ESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS tWEH...

Страница 12: ...cle is performed 18 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1 Q A4 2...

Страница 13: ...n entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 20 DQs are in High Z when exiting ZZ sleep mode Timing Diagrams continued t ZZ I SUPPLY CLK ZZ...

Страница 14: ...a trademark of Intel Corporation All product and company names mentioned in this document may be the trademarks of their respective holders Ordering Information Not all of the speed package and tempe...

Страница 15: ...r Corporation on Page 1 from 3901 North First Street to 198 Champion Court Removed 100 MHz Speed bin Changed Three State to Tri State Modified Input Load to Input Leakage Current except ZZ and MODE in...

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