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CY7C1307BV25

CY7C1305BV25

Document #: 38-05630 Rev. *A

Page 9 of 21

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 2.5V I/O logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(V

SS

) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternately
be connected to V

DD

 through a pull-up resistor. TDO should

be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.

Test Mode Select

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register. 

Test Data-Out (TDO)

The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (V

DD

) for five rising

edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK. 

Instruction Register

Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the

TDI and TDO pins as shown in TAP Controller Block Diagram.
Upon power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.

When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(V

SS

) when the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices. 

The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instruc-
tions can be used to capture the contents of the Input and
Output ring.

The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instruc-
tions are described in detail below.

Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.

IDCODE

The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction

[+] Feedback 

Содержание CY7C1305BV25

Страница 1: ...onsists of two separate ports to access the memory array The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations QD...

Страница 2: ...Reg 36 18 18 72 18 BWS 0 1 Vref Write Add Decode Write Reg 36 A 17 0 18 C C 256Kx18 Array 256Kx18 Array 256Kx18 Array Write Reg Write Reg Write Reg 18 Logic Block Diagram CY7C1307BV25 128K x 36 Array...

Страница 3: ...16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI CY7C1307BV25 512K x 36 1 2 3 4 5 6 7 8 9 10 11 A NC GND 288M NC 72M W...

Страница 4: ...ns or K and K when in single clock mode When the Read port is deselected Q x 0 are automatically three stated CY7C1305BV25 Q 17 0 CY7C1307BV25 Q 35 0 RPS Input Synchronous Read Port Select active LOW...

Страница 5: ...d takes 2 clock cycles to complete Therefore Read accesses to the device can not be initiated on two consecutive K clock rises The internal logic of the device will ignore the second Read request Read...

Страница 6: ...t the same time the SRAM will deliver the most recent infor mation associated with the specified address location This includes forwarding data from a Write cycle that was initiated on the previous K...

Страница 7: ...he upper byte D 17 9 is written into the device D 8 0 will remain unaltered H H L H No data is written into the device during this portion of a Write operation H H L H No data is written into the devi...

Страница 8: ...D 8 0 and D 35 18 will remain unaltered H L H H L H During the Data portion of a Write sequence only the byte D 17 9 is written into the device D 8 0 and D 35 18 will remain unaltered H H L H L H Dur...

Страница 9: ...tween the TDI and TDO pins as shown in TAP Controller Block Diagram Upon power up the instruction register is loaded with the IDCODE instruction It is also loaded with the IDCODE instruction if the co...

Страница 10: ...e TDI and TDO pins PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operatio...

Страница 11: ...to each state represents the value at TMS at the rising edge of TCK TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTURE IR S...

Страница 12: ...CK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns Set up Times tTMSS TMS Set up to TCK Clock Rise 10 ns tTDIS TDI Set up to TCK Clock Rise 10 ns tCS Capture Set up to TCK Rise 10 ns Hold Times tTMSH TMS Hol...

Страница 13: ...s Device ID 28 12 01011010011010101 01011010011100101 Defines the type of SRAM Cypress JEDEC ID 11 1 00000110100 00000110100 Allows unique identification of SRAM vendor ID Register Presence 0 1 1 Indi...

Страница 14: ...010 Captures the Input Output contents Places the boundary scan register between TDI and TDO Forces all SRAM output drivers to a High Z state RESERVED 011 Do Not Use This instruction is reserved for...

Страница 15: ...11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 41 9D 68 1B 95 1N 15 9M 42...

Страница 16: ...OZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 A VREF Input Reference Voltage 21 Typical value 0 75V 0 68 0 75 0 95 V IDD VDD Operating Supply VDD Max IOUT 0 mA f fMAX 1 tCYC 400 mA ISB1 Au...

Страница 17: ...citance TA 25 C f 1 MHz VDD 2 5V VDDQ 1 5V 5 pF CCLK Clock Input Capacitance 6 pF CO Output Capacitance 7 pF AC Test Loads and Waveforms 1 25V 0 25V R 50 5 pF ALL INPUT PULSES Device RL 50 Z0 50 VREF...

Страница 18: ...ise RPS WPS BWS0 BWS1 0 7 ns tHD tHD D x 0 Hold after Clock K and K Rise 0 7 ns Output Times tCO tCHQV C C Clock Rise or K K in single clock mode to Data Valid 25 2 5 ns tDOH tCHQX Data Output Hold af...

Страница 19: ...after a NOP 29 In this example if address A2 A1 then data Q20 D10 and Q21 D11 Write data is forwarded immediately as read results This note applies to the whole diagram K 1 2 3 4 5 6 7 K RPS WPS A Q...

Страница 20: ...eed MHz Ordering Code Package Diagram Package Type Operating Range 167 CY7C1305BV25 167BZC 51 85180 165 ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Commercial CY7C1307BV25 167BZC CY7C1305BV25 167...

Страница 21: ...ription Table Changed tTCYC from 100 ns to 50 ns changed tTF from 10 MHz to 20 MHz and changed tTH and tTL from 40 ns to 20 ns in TAP AC Switching Characteristics table Modified the ZQ pin definition...

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