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CY7C1246V18, CY7C1257V18
CY7C1248V18, CY7C1250V18

Document Number: 001-06348  Rev. *D

Page 12 of 27

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, tie TCK LOW (V

SS

) to

prevent device clocking. TDI and TMS are internally pulled up
and may be unconnected. They may alternately be connected to
V

DD

 through a pull up resistor. TDO must be left unconnected.

Upon power up, the device comes up in a reset state which does
not interfere with the operation of the device.

Test Access Port – Test Clock

The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.

Test Mode Select

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. You can leave this pin
unconnected if the TAP is not used. The pin is pulled up inter-
nally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see 

“TAP Controller State

Diagram” on page 14

. TDI is internally pulled up and can be

unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register. 

Test Data-Out (TDO)

The TDO output pin is used to serially clock data-out from the
registers. Whether the output is active depends on the current
state of the TAP state machine (see 

“Instruction Codes” on

page 17

). The output changes on the falling edge of TCK. TDO

is connected to the least significant bit (LSB) of any register.

Performing a TAP Reset

A reset is performed by forcing TMS HIGH (V

DD

) for five rising

edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a High-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins and
scans data into and out of the SRAM test circuitry. Only one
register can be selected at a time through the instruction
registers. Data is serially loaded into the TDI pin on the rising
edge of TCK. Data is output on the TDO pin on the falling edge
of TCK. 

Instruction Register

Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins as shown in 

“TAP Controller Block Diagram” on

page 15

. Upon power up, the instruction register is loaded with

the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.

When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary ‘01’ pattern to enable fault
isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This shifts data through the SRAM with minimal
delay. The bypass register is set LOW (V

SS

) when the BYPASS

instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices. 

The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.

“Boundary Scan Order” on page 18

 shows the order in which the

bits are connected. Each bit corresponds to one of the bumps on
the SRAM package. The MSB of the register is connected to TDI,
and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in 

“Identification Register Definitions” on

page 17

.

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in 

“Instruction

Codes” on page 17

. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions
are described in this section in detail.

Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.

[+] Feedback 

[+] Feedback 

Содержание CY7C1246V18

Страница 1: ...V18 are 1 8V Synchronous Pipelined SRAM equipped with DDR II architecture The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry Addresses for read and write are latched on...

Страница 2: ...Data Reg R W DQ 7 0 Output Logic Reg Reg Reg 8 8 16 8 NWS 1 0 VREF Write Add Decode 8 8 LD Control 21 2M x 8 Array 2M x 8 Array Write Reg Write Reg CQ CQ R W DOFF QVLD 8 CLK A 20 0 Gen K K Control Lo...

Страница 3: ...W DQ 17 0 Output Logic Reg Reg Reg 18 18 36 18 BWS 1 0 VREF Write Add Decode 18 18 LD Control 20 1M x 18 Array 1M x 18 Array Write Reg Write Reg CQ CQ R W DOFF QVLD 18 CLK A 18 0 Gen K K Control Logic...

Страница 4: ...NC NC VSS NC DQ2 NC NC NC VREF NC NC VDDQ NC VDDQ NC NC VDDQ VDDQ VDDQ NC VDDQ NC DQ1 NC VDDQ VDDQ NC VSS NC NC NC TDI TMS VSS A NC A NC NC NC ZQ NC DQ0 NC NC NC NC A CY7C1257V18 4M x 9 2 3 4 5 6 7 1...

Страница 5: ...NC NC NC VREF NC DQ3 VDDQ NC VDDQ NC DQ5 VDDQ VDDQ VDDQ NC VDDQ NC DQ4 NC VDDQ VDDQ NC VSS NC NC NC TDI TMS VSS A NC A NC NC NC ZQ NC DQ2 NC DQ1 NC NC A CY7C1250V18 1M x 36 2 3 4 5 6 7 1 A B C D E F G...

Страница 6: ...8 0 and BWS1 controls D 17 9 CY7C1250V18 BWS0 controls D 8 0 BWS1 controls D 17 9 BWS2 controls D 26 18 and BWS3 controls D 35 27 All the Byte Write Selects are sampled on the same edge as the data De...

Страница 7: ...gh a 10 Kohm or less pull up resistor The device behaves in DDR I mode when the DLL is turned off In this mode the device can be operated at a frequency of up to 167 MHz with DDR I timing TDO Output T...

Страница 8: ...data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks K and K When write access is deselected the device ignores all inputs after the pending...

Страница 9: ...he truth table for the CY7C1246V18 CY7C1257V18 CY7C1248V18 and CY7C1250V18 follows 2 3 4 5 6 7 Operation K LD R W DQ DQ Write Cycle Load address wait one cycle input write data on consecutive K and K...

Страница 10: ...7C1246V18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltered CY7C1248V18 only the upper byte D 17 9 is written into the device D 8 0 remains unaltered H L L H During the da...

Страница 11: ...y the byte D 17 9 is written into the device D 8 0 and D 35 18 remain unaltered H L H H L H During the data portion of a write sequence only the byte D 17 9 is written into the device D 8 0 and D 35 1...

Страница 12: ...dge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP Contr...

Страница 13: ...ster After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD places an in...

Страница 14: ...ler follows 9 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTURE IR SHIFT IR EXIT1 IR PAUSE IR EXIT2 IR UPDATE IR 1 0 1 1 0...

Страница 15: ...GH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 108 0 1 2 Instr...

Страница 16: ...TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions Figure...

Страница 17: ...struction Codes Instruction Code Description EXTEST 000 Captures the input output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO Thi...

Страница 18: ...35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M...

Страница 19: ...power and clock K K for 2048 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at...

Страница 20: ...0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW Output LOW Voltage IOL 0 1 mA Nominal Impedance VSS 0 2 V VIH Input HIGH Voltage VREF 0 1 VDDQ 0 15 V VIL Input LOW Voltage 0 15 VREF 0 1 V IX Input L...

Страница 21: ...Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance per EIA JESD51 16 25 C W JC Thermal Resistance Junction to Case 2 91 C W AC Test Loads and Waveform...

Страница 22: ...2 ns tCQDOH tCQHQX Echo Clock High to Data Invalid 0 2 0 2 0 2 ns tCQH tCQHCQL Output Clock CQ CQ HIGH 23 0 88 1 03 1 15 ns tCQHCQH tCQHCQH CQ Clock Rise to CQ Clock Rise 23 rising edge to rising edg...

Страница 23: ...OH QVLD t NOP DQ KHKH 12 Read Latency 2 0 Cycles NOP NOP CCQO tSD HD tSD tHD t CLZ t CHZ D20 D21 D30 D31 t CQDOH Q00 Q11 Q01 Q10 tDOH tCO Q40 Q41 tCQD t t tCQH CQHCQH Notes 28 Q00 refers to output fro...

Страница 24: ...all Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1257V18 375BZI CY7C1248V18 375BZI CY7C1250V18 375BZI CY7C1246V18 375BZXI 51 85195 165 ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Pb...

Страница 25: ...00BZXC CY7C1246V18 300BZI 51 85195 165 ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1257V18 300BZI CY7C1248V18 300BZI CY7C1250V18 300BZI CY7C1246V18 300BZXI 51 85195 165 ball Fine P...

Страница 26: ...Y7C1250V18 Document Number 001 06348 Rev D Page 26 of 27 Package Diagram Figure 6 165 ball FBGA 15 x 17 x 1 40 mm 51 85195 0 2 2 8 8 8 3 4 0 0 2 2 4 0 6 7 44 6 7 0 2 0 2 3 2 0 490 3 2 3 3 4 3 0 7 4 G...

Страница 27: ...e changes without further notice to the materials described herein Cypress does not assume any liability arising out of the application or use of any product or circuit described herein Cypress does n...

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