Bender AGH420, Руководство пользователя

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Operation of the device
38 isoEV425_D00126_09_M_XXEN/03.2019

: The measured value can be displayed in the history memory
.
HiS Display Description

± R kΩ
Insulation resistance
R
F
1 kΩ … 1 MΩ Resolution 1 kΩ

C μF
System leakage capacitance
C
e
1 μF … 10 μF (isoEV425) Resolution 1 μF
1 μF … 25 μF (isoEV425HC)

~ ± U L1 L2 V
Nominal system voltage L1 - L2
U
n
0 V
RMS
… 1.20 kV
RMS
Resolution 1 V
RMS
/10 V
RMS

± U L1 = V
Residual voltage L1/+ - PE
U
L1e
0 V
DC
… ±1.20 kV
DC
Resolution 1 V
DC
/10 V
DC

± U L2
=
V
Residual voltage L2/- - PE
U
L2e
0 V
DC
… ±1.20 kV
DC
Resolution 1 V
DC
/10 V
DC

± R %
Fault location in %
-100 % …+100 %
Indication only from U
n
≥ 100 V
DC
R
L1F
= (200 % * R
F
) / (100 % + x %)
R
L2F
= (200 % * R
F
) / (100 % - x %)
-
U R = kΩ
Insulation resistance
R
UGF
1 kΩ … 1 MΩ Resolution 1 kΩ
R
UGF
is an approximate value for asymmetrical insula-
tion faults and can be used as a trend indicator with
short measuring times. It is determined by the DC mains
voltage ( > 50 V ) and is only correct in the event of one-
sided insulation faults. If there are simultaneous insula-
tion faults at L1/+ and L2/- the value is indicated as a too
high impedance.