bdi
GDB
for GNU Debugger, BDI2000 (ARM)
User Manual
35
© Copyright 1997-2005 by ABATRON AG Switzerland
V 1.17
STA2051/ STR710F Internal Flash:
For the STA2051 / STR710F internal flash, the BDI assumes the following structure of the address.
Select the sectors to erase by setting the appropriate bit in the bank0 or bank1 field. You can only set
bits in one bank at the same time. It is not possible to erase both banks in one step.
Following some examples:
ERASE 0x00000080 ;erase sector B0F7
ERASE 0x000000FF ;erase all sectors of bank 0
ERASE 0x00030000 ;erase all sectors of bank 1
[FLASH]
WORKSPACE 0x20000000 ;workspace in internal SRAM
CHIPTYPE STA2051 ;STA2051 internal flash
CHIPSIZE 0x40000 ;256k internal program flash
BUSWIDTH 32 ;select 32 for this flash
FILE $sta2051b0.bin ;The file to program
FORMAT BIN 0x40000000
ERASE 0x000000FF ;erase all sectors of bank 0
ST30F7xx Internal Flash:
The ST30F7xx flash is handled like the STA2051 flash. The only difference is, that there exists only
flash bank 0 but with 12 sectors.
ERASE 0x00000FFF ;erase all sectors of bank 0
ADuC7000 Internal Flash:
The BDI2000 supports programming of the ADuC7000 internal flash. As second parameter for the
ERASE command, PAGE (default) or MASS can be entered. Following a configuration example:
[FLASH]
WORKSPACE 0x00010020 ;workspace in internal SRAM
CHIPTYPE ADUC7000 ;ADuC7000 internal flash
CHIPSIZE 0x10000 ;64k internal program flash
BUSWIDTH 16 ;select 16 for this flash
FILE E:\temp\aduc8k.bin
FORMAT BIN 0x00080000
ERASE 0x88000 ;erase page
ERASE 0x88200 ;erase page
ERASE 0x88400 ;erase page
ERASE 0x88600 ;erase page
reserved
bank 0
14 bit
2 bit
8 bit
8 bit
reserved
bank 1