T R A N S I ST O R
L3 1 1
5 5 003 3 7 7
#2205 84
Q 3 0 1
2 2 3 2 1 6 6 0
Transistor
2SC 2 1 6 6
Q302
223 1 9454
"
2SC 1 945D
T R I M M E R CAPAC I T O R
TC3 0 1
3 90000 1 1
ECV- l ZW 20 x 40N
20 pF
D I O D E
TC302, 303
3 9 000009
ECV- l ZW 5 0 x 40N
5 0 pF
D 3 0 1 , 302,308 21 0900 1 1
Silicon
l OD l
TC304, 305
3 8 8 20080
222 2-80 8-6 1 809
80 pF
D 3 0 7
2 1 0 0 1 880
Germanium
1 S l 8 8FM
D303 - 3 06
2 1 0 1 5 5 5 0
Silicon
1 S l 5 5 5
R E LAY
RL3 0 1
700000 3 1
FBR-22 1D 0 1 2
R E S I ST O R
R 3 0 3
4 2 1 24560
Carbon Composition
Yz
GK
56 .11.
R306
4 2 1 24 1 0 1
"
"
"
"
1 00 .11.
R 3 05
4 2 1 24 1 5 1
"
"
"
"
1 5 0 .11.
CO N N E CTO R
R302
4 2 1 24 2 2 1
"
"
"
"
220 .11.
1 3 0 1
6 8000003
S0-239
R 3 0 1 , 3 04
4 2 1 244 7 1
"
"
" "
470 .11.
(L302, 3 0 5 )
R 3 0 8
4 1 1 4 3 1 0 2
Carbon Film
l /4 S T J
1 k.11.
9 1 1 00008
Wrapping Terminal C
R 3 0 7
4 0 1 4 3 1 03
"
"
"
VJ
10 k.11.
8005 0 74 1
Booster Heat Sink
POT E N T I O M E T E R
VR3 0 1
49906 3 0 1
EVL-SOAAOOB 3 2
3 0 0 .11.B
VR302
49906 1 0 3
EVL-SOAAOOB 14
1 0 k.11.B
Description
CAPAC I T O R
* * * * * MA I N C H ASS I S * * * * *
C334
3 1 8 29095
Ceramic Disc
5 0WV SL
0.5 pF C5 0 1 - 5 06 ,
3 2 8 2 1 1 0 2
Ceramic Feed Thru ECK-Y l H 1 0 2WE
C3 1 6 , 3 3 5
3 1 8290 1 0
"
"
"
"
1 pF
5 08, 509,
C3 1 0, 3 1 5
3 1 82905 0
"
"
"
"
5 pF
5 1 1 -5 1 3 ,
C302
3 1 829200
"
"
"
"
20 pF
5 1 5
C30 1 , 3 1 7
3 1 829330
"
"
"
"
33 pF
C5 1 7
3 6 8 2 5 2 2 3
Mylar
5 0WV
0.022 µF
C307
3 1 829390
"
"
"
"
39 pF
C320, 3 2 9
3 1 8 294 7 0
"
"
"
"
47 pF
C3 2 3
3 1 829620
"
"
"
"
62 pF
C3 1 4 , 324
3 1 829820
"
"
"
"
82 pF
R E S I STOR
C3 2 1 , 3 2 8
3 1 8 29 1 0 1
"
"
"
"
100 pF
R5 0 1
4 1 1 4 3 4 7 3
Carbon Film
l/4S
TJ
47 k.11.
C3 1 9
3 1 829 1 2 1
"
"
"
"
1 2 0 pF
C3 04,306,309, 30820103
"
"
"
0.01 µF
3 1 1 , 3 1 3 , 3 1 8,
3 2 6 , 3 2 7 , 3 3 1 ,
* * * * * 1 44 M H z CO N V E R T E R M A I N BOA R D * * * * *
3 3 3
PB- 1 9 25
6 04 1 9 25 0
Printed Circuit Board
C3 0 3 ,305 , 3 0 8 , 36 226226
Electrolytic
1 6WV
TW
22 µF
0 1 9250AZ PCB with Components
3 1 2,330,3 3 2
I C , F E T, T R A N S I ST O R
I N D UCTOR
Q60 1
25000 1 0 1
IC
MC- 1 4 96G
L3 1 4
5 3 0 1 0001
Micro Inductor
l Q µH Q6 1 0
25000 1 2 8
"
78L08
L3 04 , 3 1 3
5 5 00 3 1 6 0
# 220 1 96
Q60 2,605 ,6 06 23 8005 1 0
FET
3SK5 1
L302, 305
5 5 003262
# 220 3 24
Q6 04
2 2 3 0 7 3 0 0
Transistor
2SC 7 3 0
L3 0 1
5 5 0 0 3 3 7 3
#2205 2 7
Q6 0 7-609
2 2 3 0 7 84 2
"
2S(: 7 84 R
L3 0 3 , 3 0 6
5 5 00 3 3 74
# 2205 28
Q6 1 1 , 6 1 2
223 1 8 1 5 4
"
2SC 1 8 1 5 Y
L3 0 7
5 5 00 3 3 7 5
#2205 29
Q6 0 3
223 205 3 0
"
2SC 205 3
L3 0 8 - 310, 312 5 5 0 0 3 3 76
# 2205 3 0
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