TSSP60..
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Vishay Semiconductors
Rev. 2.1, 10-Apr-2019
2
Document Number: 82483
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BLOCK DIAGRAM
PRESENCE SENSING
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability
33 k
Ω
V
S
OUT
Demo
-
GND
pass
AMP
Input
PIN
Band
dulator
3
4
1
16839-4
+3 V
IR emitter
+3 V
38 kHz
Envelope
s
ignal
Out to
μC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Supply voltage
V
S
-0.3 to +6
V
Supply current
I
S
5
mA
Output voltage
V
O
-0.3 to (V
S
+ 0.3)
V
Output current
I
O
5
mA
Junction temperature
T
j
100
°C
Storage temperature range
T
stg
-25 to +85
°C
Operating temperature range
T
amb
-25 to +85
°C
Power consumption
T
amb
≤
85 °C
P
tot
10
mW
ELECTRICAL AND OPTICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply current (pin 3)
E
v
= 0, V
S
= 5 V
I
SD
0.55
0.7
0.9
mA
E
v
= 40 klx, sunlight
I
SH
-
0.8
-
mA
Supply voltage
V
S
2.5
-
5.5
V
Transmission distance
E
v
= 0, test signal see Fig. 1,
IR diode TSAL6200, I
F
= 50 mA
d
-
8
-
m
Output voltage low (pin 1)
I
OSL
= 0.5 mA, E
e
= 2 mW/m
2
,
test signal see Fig. 1
V
OSL
-
-
100
mV
Minimum irradiance
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see Fig. 1
E
e min.
-
0.7
1.2
mW/m
2
Maximum irradiance
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see Fig. 1
E
e max.
50
-
-
W/m
2
Directivity
Angle of half transmission
distance
ϕ
1/2
-
± 50
-
deg
