BIOS
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CAS# Latency
Enables you to select the CAS latency time. The value is set at the factory depending
on the DRAM installed. Do not change the values in this field unless you change
specifications of the installed DRAM.
Options: Auto, CL=2.0, CL=2.5, CL=3.
Row cycle time (tRC)
This filed specifies the Row Cycle Time. RAS# active to RAS# active or auto refresh of
the same bank.
Options: Auto, 7 Bus Clocks ~ 22 Bus Clocks in 1 Bus clock increments.
Row refresh cyc time (tRFC)
This filed specifies the Row Refresh Cycle Time. Auto-refresh active to RAS# or RAS#
to auto refresh.
Options: Auto, 9 Bus Clocks ~ 24 Bus Clocks in 1 Bus clock increments.
RAS# to CAS# delay (tRCD)
This filed specifies the RAS# to CAS# delay to read/write command to the same bank.
Options: Auto, 2 Bus Clocks ~ 7 Bus Clocks in 1 Bus clock increments.
Row to Row delay (tRRD)
This filed specifies the Row to Row delay of different banks.
Options: Auto, 2 Bus Clocks ~ 7 Bus Clocks in 1 Bus clock increments.
Min RAS# active time (tRAS)
This filed specifies the minimum RAS# active time.
Options: Auto, 5 Bus Clocks ~ 15 Bus Clocks in 1 Bus clock increments.
Row precharge Time (tRP)
This filed specifies the Row Precharge Time. Precharge to active or Auto-refresh of the
same bank.
Options: Auto, 2 Bus Clocks ~ 6 Bus Clocks in 1 Bus clock increments.
Write recovery time (tWR)
This bits specifies the Write Recovery Time. Called Trd1 by Samsung, measures when
the last write datum is safely registered by the DRAM. It measures from the last data
to precharge.
Options: Auto, 2 Bus Clocks, 3 Bus Clocks.
