MC6800
MAXIMUM RATINGS
READ/WRITE TIMING
Figures 2 and 3,
f
=
1.0 MHz, Load Circuit of Figure 6.
Rating
Symbol
Value
Unit
This device
contains circuitry
to
protect
the
Supply Voltage
VCC
~O.3
to
+7.0
Vdc
inputs against damage due to high static
volt~
Input
Voltage
Vin
__0_3
to
+70
Vdc
ages or electric fields; however, it
is
advised
that
_
0
normal
precautions
be
taken
to avoid
applica—
Operating
Temperature
Range
TA
0
to
+70
C
tion of any voltage higher
than maximum rated
Storage
Temperature
Range
Tstg
—55
to
+150
°C
voltages
to
this high impedance
circuit.
Thermal Resistance
GJA
7O
oC/W
Characteristic
Symbol
Min
Typ
Max
Unit
Address Delay
{AD
—
220
300
ns
Peripheral Read Access Time
tacc
——
—
540
ns
ttacc
=
tut
—
“AD
+
tDSR)
Data
Setup
Time (Read)
tDSR
100
-
H
ns
Input
Data Hold Time
tH
10
—
—
ns
Output
Data Hold Time
tH
10
25
—
ns
Address Hold Time (Address, R/W, VMA)
tAH
50
75
-—
ns
Enable
High
Time for
DBE
Input
tEH
450
—
—
ns
Data Delay Time (Write)
tDDW
—
165
225
ns
Processor
Contro|s*
Processor Control
Setup
Time
tpcs
200
—
——
ns
Processor Control Rise and Fall Time
tPCr:
tpcf
—
—
100
ns
Bus Available Delay
tBA
—-
—
300
ns
Three
State
Enable
tTSE
_
—
40
ns
Three
State
Delay
tTSD
—
——
700
ns
Data
Bus
Enable Down Time During
451
Up Time (Figure
3)
tDBE
150
—
——
ns
Data
Bus
Enable Delay (Figure
3)
tDBED
300
—
—
ns
Data
Bus
Enable Rise and Fall Times (Figure
3)
‘DBErr tDBEf
——
—
25
ns
*Additional
information
is
given
in
Figures
12
through
16 of
the
Family Characteristics
H
see pages
17
through
20.
FIGURE 2
—
READ DATA FROM MEMORY OR PERIPHERALS
Start
of Cycle
/
$1
Vcc
—
0.3
v
0.3
v
tr
a2
2.4
V
R/W
Address
From
MPU
0,4
V
2.4
V
VMA
tDSFl
Data
From Memory
or Peripherals
0.8
V
mm
Data Not Valid
Data Valid
0.3
V
A-3
MOTOROLA
Semiconductor Products
Inc.
“—4
Summary of Contents for P7001 /IEEE 488
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