STMicroelectronics STM32F042C6, Manual

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Electrical characteristics STM32F042x4 STM32F042x6
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6.3.3 Embedded reset and power control block characteristics
The parameters given in
Table 23
are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in
Table 21: General operating
conditions
.
Table 22. Operating conditions at power-up / power-down
Symbol Parameter Conditions Min Max Unit
t
VDD
V
DD
rise time rate
-
0
∞
µs/V
V
DD
fall time rate 20
∞
t
VDDA
V
DDA
rise time rate
-
0
∞
V
DDA
fall time rate 20
∞
Table 23. Embedded reset and power control block characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
POR/PDR
(1)
1. The PDR detector monitors V
DD
and also V
DDA
(if kept enabled in the option bytes). The POR detector
monitors only V
DD
.
Power on/power down
reset threshold
Falling edge
(2)
2. The product behavior is guaranteed by design down to the minimum V
POR/PDR
value.
1.80 1.88
1.96
(3)
3. Data based on characterization results, not tested in production.
V
Rising edge 1.84
(3)
1.92 2.00 V
V
PDRhyst
PDR hysteresis - - 40 - mV
t
RSTTEMPO
(4)
4. Guaranteed by design, not tested in production.
Reset temporization - 1.50 2.50 4.50 ms
Table 24. Programmable voltage detector characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
PVD0
PVD threshold 0
Rising edge 2.1 2.18 2.26 V
Falling edge 2 2.08 2.16 V
V
PVD1
PVD threshold 1
Rising edge 2.19 2.28 2.37 V
Falling edge 2.09 2.18 2.27 V
V
PVD2
PVD threshold 2
Rising edge 2.28 2.38 2.48 V
Falling edge 2.18 2.28 2.38 V
V
PVD3
PVD threshold 3
Rising edge 2.38 2.48 2.58 V
Falling edge 2.28 2.38 2.48 V
V
PVD4
PVD threshold 4
Rising edge 2.47 2.58 2.69 V
Falling edge 2.37 2.48 2.59 V
V
PVD5
PVD threshold 5
Rising edge 2.57 2.68 2.79 V
Falling edge 2.47 2.58 2.69 V