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Si5341/40
Preliminary Rev. 0.9
11
Output Voltage Low
1, 2, 3
V
OL
V
DDO
= 3.3 V
CMOS1
I
OL
= 10 mA
—
—
V
DDO
x 0.15
V
CMOS2
I
OL
= 12 mA
—
—
CMOS3
I
OL
= 17 mA
—
—
V
DDO
= 2.5 V
CMOS1
I
OH
= -6 mA
—
—
V
DDO
x 0.15
V
CMOS2
I
OL
= 8 mA
—
—
CMOS3
I
OL
= 11 mA
—
—
V
DDO
= 1.8 V
CMOS1
I
OH
= –3 mA
—
—
V
DDO
x 0.15
V
CMOS2
I
OH
= –4 mA
—
—
CMOS3
I
OL
= 5 mA
—
—
LVCMOS Rise and Fall
Times
3
(20% to 80%)
tr/tf
VDDO = 3.3V
—
360
—
ps
VDDO = 2.5 V
—
420
—
ps
VDDO = 1.8 V
—
280
—
ps
Table 7. LVCMOS Clock Output Specifications (Continued)
(V
DD
= 1.8 V ±5%, V
DDA
= 3.3 V ±5%, V
DDO
= 1.8 V ±5%, 2.5 V ±5%, or 3.3 V ±5%, T
A
= –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Notes:
1.
Driver strength is a register programmable setting and stored in NVM. Options are CMOS1, CMOS2, CMOS3.
2.
I
OL
/I
OH
is measured at V
OL
/V
OH
as shown in the DC test configuration
3.
A series termination resistor (Rs) is recommended to help match the source impedance to a 50 Ohm PCB trace. A 5 pF
capacitive load is assumed.
DC Test Configuration
Zs
I
OL
/I
OH
V
OL
/V
OH
50
5 pF
AC Test Configuration
Rs
Zs
Zs + Rs = 50 Ohms