Chapter 3 – iNAND Interface Description
Revision 3.1
SanDisk iNAND Product Manual
© 2006 SanDisk Corporation
3-6
12/07/06
Field CSD
Value
Description
VDD_W_ CURR_MIN
100 mA
Max. write current @VDD min.
VDD_W_ CURR_MAX
80 mA
Max. write current @VDD max.
C_SIZE_ MULT
2G=2048
1G=1024
512=512
256=256
Device size multiplier
ERASE_BLK_EN
Yes
Erase single block enable
SECTOR_ SIZE
32 blocks
Erase sector size
WP_GRP_ SIZE
128 sectors
Write protect group size
WP_GRP_ ENABLE
Yes
Write protect group enable
Reserved
---
Reserved for MMC compatibility
R2W_ FACTOR
x16
Write speed factor
WRITE_BL_ LEN
2G
Up to 1G
Max. write data block length
WRITE_BL PARTIAL
No
Partial blocks for write allowed
--- ---
Reserved
FILE_ FORMAT_ GRP
0
File format group
COPY
Has been copied
Copy flag (OTP)
PERM_ WRITE_
PROTECT
Not protected
Permanent write protection
TMP_WRITE_PROTECT
Not protected
Temporary write protection
FILE_ FORMAT
HD w/partition
File format
Reserved --- Reserved
CRC CRC7
CRC
---
---
Not used, always “1”
