Samsung SCX-1100, Service Manual

Page: 69 / 109

3-10
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
Parameter Symbol Min Typ. Max Unit
ROM/SRAM Address Delay
tRAD
- 12 - ns
ROM/SRAM Chip select Delay
tRCD
- 11 - ns
ROM/SRAM Output enable Delay
tROD
- 11 - ns
ROM/SRAM read Data Setup time
tRDS
- 1 - ns
ROM/SRAM read Data Hold time
tRDH
- 5 - ns
ROM/SRAM Byte Enable Dalay
tRBED
- 13 - ns
ROM/SRAM Write Byte Enable Delay
tRWBED
- 14 - ns
ROM/SRAM output Data Delay
tRDD
- 14 - ns
ROM/SRAM external Wait Setup time
tWS
- 1 - ns
ROM/SRAM external Wait Hold time
tWH
- 5 - ns
ROM/SRAM Write enable Delay
tRWD
- 14 - ns
DRAM Address Delay
tDAD
- 12 - ns
DRAM Row active Delay
tDRD
- 11 - ns
DRAM Read Column active Delay
tDRCD
- 11 - ns
DRAM Output enable Delay
tDOD
- 12 - ns
DRAM read Data Setup time
tDDS
- 1 - ns
DRAM read Data Hold time
tDDH
- 5 - ns
DRAM Write Cas active Delay
tDWCD
- 14 - ns
DRAM Cbr Cas active Delay
tDCCD
- 12 - ns
DRAM Write enable Delay
tDWD
- 13 - ns
DRAM output Data Delay
tDDD
- 14 - ns
SDRAM Address Delay
tSAD
- 4 - ns
SDRAM Chip Select Delay
tSCSD
- 4 - ns
SDRAM Row active Delay
tSRD
- 4 - ns
SDRAM Column active Delay
tSCD
- 4 - ns
SDRAM Byte Enable Delay
tSBED
- 5 - ns
SDRAM Write enable Delay
tSWD
- 5 - ns
SDRAM read Data Setup time
tSDS
- 4 - ns
SDRAM read Data Hold time
tSDH
- 0 - ns
SDRAM output Data Delay
tSDD
- 8 - ns
SDRAM Clock Eable Delay
tCKED
- 5 - ns
< ROM/SRAM Bus Timing Constants >
(VDDP : 3.3V, VDDI : 2.5V, Ta =25˚C, PLCAP=70pf, Max/Min=typ. ±30%)