Samsung MUXONENAND A-DIE KFN4G16Q2A, Specification, Page: 140 / 173

MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 140 -
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MuxOneNAND4G(KFN4G16Q2A-DEBx)
4.3 DC Characteristics
NOTE :
1) CE should be VIH for RDY. IOBE should be ‘0’ for INT.
2) I
CC
active for Host access
3) I
CC
active for Internal operation. (without host access)
4) Vccq is equivalent to Vcc-IO
Parameter Symbol Test Conditions
RMS Value
Unit
Min Typ Max
Input Leakage Current I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
Single
- 1.0 - + 1.0
µ
A
DDP
- 2.0 - + 2.0
Output Leakage Current I
LO
V
OUT
=V
SS
to V
CC
, V
CC
=V
CCmax
,
CE or OE=V
IH
(Note 1)
Single
- 1.0 - + 1.0
µ
A
DDP
- 2.0 + 2.0
Active Asynchronous Read Current
(Note 2)
I
CC1
CE=V
IL
, OE=V
IH
- 8 15 mA
Active Burst Read Current (Note 2) I
CC2R
CE=V
IL
, OE=V
IH
, WE=V
IH
66MHz - 20 30 mA
83MHz - 25 35 mA
1MHz - 3 4 mA
66MHz
(DDP)
- 30 38 mA
83MHz
(DDP)
- 35 45 mA
1MHz
(DDP)
- 3 4 mA
Active Burst Write Current (Note 2) I
CC2W
CE=V
IL
, OE=V
IH,
WE=V
IL
66MHz - 20 30 mA
83MHz - 25 35 mA
1MHz - 3 4 mA
66MHz
(DDP)
- 30 38 mA
83MHz
(DDP)
- 35 45 mA
1MHz
(DDP)
- 3 4 mA
Active Asynchronous Write Current
(Note 2)
I
CC3
CE=V
IL
, OE=V
IH
Single - 8 15 mA
DDP - 17 25 mA
Active Load Current (Note 3) I
CC4
CE=V
IL
, OE=V
IH
, WE=V
IH
- 30 40 mA
Active Program Current (Note 3) I
CC5
CE=V
IL
, OE=V
IH
, WE=V
IH
- 25 35 mA
Active Erase Current (Note 3) I
CC6
CE=V
IL
, OE=V
IH
, WE=V
IH
- 20 30 mA
Multi Block Erase Current (Note 3) I
CC7
CE=V
IL
, OE=V
IH
, WE=V
IH
, 64blocks - 20 30 mA
Standby Current I
SB
CE= RP=V
CC
±
0.2V
Single - 10 50
µ
A
DDP - 20 100
Input Low Voltage V
IL
- -0.5 - 0.4 V
Input High Voltage (Note 4) V
IH
-
V
CCq
-
0.4
-
V
CCq
+0.
4
V
Output Low Voltage V
OL
I
OL
= 100
µ
A ,V
CC
=V
CCmin
, V
CCq
=V
CCqmin
- - 0.2 V
Output High Voltage V
OH
I
OH
= -100
µ
A , V
CC
=V
CCmin
, V
CCq
=V
CCqmin
V
CCq
-
0.1
- - V