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(354 ~ 366KHz)
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A
ELECTRONICS
REV
C
PART NO.
CHECK
A
2
DRAW
B
SAMSUNG
C
48
BA41-XXXXX
October 23, 2007 10:38:02 AM
1.0
PV2
6/26/2007
KEVIN LEE
WUSHIJIANG
SUN XIAO
DEV. STEP
B
2
3
4
(1.8V)
1
MODULE CODE
SAMSUNG ELECTRONICS CO’S PROPERTY.
SAMSUNG PROPRIETARY
1
TITLE
DDR2 Power
4
PROPRIETARY INFORMATION THAT IS
COM-22C-015(1996.6.5) REV. 3
THIS DOCUMENT CONTAINS CONFIDENTIAL
(10A)
APPROVAL
LAST EDIT
PAGE
3
D:/tingting/geneva/Geneva_pr_1023
DDR2 POWER
MAIN
Gevena
58
10
R720
P5.0V_AUX
C146
1000nF
100nF
C995
R716
10
G_DDR
25V
100nF
C939
AL
68uF
C182
25V
P5.0V_AUX
100nF
C892
25V
C940
100nF
25V
EC507
330uF
2.5V
AL
C867
1000nF
P5.0V
R133
1%
G_DDR
R737
20K
1K
VDC
1%
1%
7.5K
R718
10000nF
C866
6.3V
G_DDR
AL
2.5V
330uF
EC506
2.2uH
G_DDR
R717
L12
G_DDR
NO_STUFF
470K
G_DDR
1nF
C147
10
R134
P0.9V
G_DDR
P1.8V_AUX
Q528
AP6680AGM
5
D1 D2
6 7
D3 D4
8
4
G
1
S1 S2
2 3
S3
3.3
R738
C870
1000nF
10
R130
1%
715K
P1.8V_AUX
C938
1nF
R131
D1
5 6
D2 D3
7 8
D4
G
4
1
S1
2
S2 S3
3
AP6680AGM
Q527
G_DDR
SHORT2
INSTPAR
6.3V
C865
10000nF
VDC
BAT54
D516
1
3
C148
2.2nF
C871
1000nF
TP19345
4.7
R744
PGND_1
17
PGND_2
PGND_3
16
REF
8
THERM
25
2
TON
VCCA
5
20
VDDP
3
VDDQS
VSSA
4
11
VTTEN
VTTIN_1
13
VTTIN_2
12
10
VTTS
15
VTT_1
14
VTT_2
SC486IMLTRT
U518
24
BST
COMP
9
DH
23
DL
19
EN_PSV
1
6
FB
21
ILIM
LX
22
7
PGD
18
TP19290
1%
R719
30.1K
C996
100nF
C868
SHORT505
INSTPAR
C869
1nF
NO_STUFF
1nF
C891
1000nF
14-B1 18-C1
18-C3
NO_STUFF
AL
25V
C183
68uF
P5.0V_AUX
P1.8V_AUX
MEM1_VREF
KBC3_SUSPWR
NO_STUFF
C872
1nF