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3SK318 

Rev.2.00  Aug 10, 2005  page 6 of 7 

 

S Parameter 

(V

DS

 = 3.5V, V

G2S

 = 3V, I

D

 = 10mA, Zo = 50

S11 S21 S12 S22 

Freq. 

(MHz) 

MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 

50  1.000 –2.8  2.41 176.3 

0.00068 89.1  0.999  –2.2 

100  0.998 –5.8  2.41 171.9 

0.00176 88.5  0.996  –4.5 

150  0.997 –9.1  2.39 167.6 

0.00223 80.7  0.996  –6.7 

200  0.994 –12.2 2.38 163.7 

0.00303 76.6  0.994  –8.7 

250  0.994 –15.1 2.37 159.8 

0.00365 79.1  0.991  –11.0 

300  0.986 –18.5 2.35 155.5 

0.00414 75.4  0.988  –13.2 

350  0.978 –21.3 2.30 151.4 

0.00484 75.0  0.983  –15.3 

400  0.972 –24.1 2.28 147.6 

0.00533 78.0  0.980  –17.4 

450  0.969 –27.0 2.26 143.6 

0.00588 71.6  0.976  –19.6 

500  0.954 –29.7 2.23 140.0 

0.00617 69.5  0.971  –21.7 

550  0.955 –32.8 2.19 135.9 

0.00666 71.5  0.966  –23.7 

600  0.941 –35.7 2.17 132.2 

0.00672 70.6  0.960  –25.6 

650  0.932 –38.3 2.14 128.6 

0.00694 69.0  0.955  –27.8 

700  0.924 –41.3 2.09 125.0 

0.00709 71.4  0.948  –29.9 

750  0.919 –44.1 2.07 121.5 

0.00689 69.0  0.942  –31.8 

800  0.905 –46.9 2.03 117.9 

0.00699 68.9  0.937  –33.8 

850  0.896 –49.2 2.00 114.7 

0.00644 74.2  0.930  –35.8 

900  0.884 –52.4 1.96 110.4 

0.00633 75.5  0.923  –37.6 

950  0.880 –54.7 1.93 107.1 

0.00585 77.8  0.917  –39.8 

1000 0.866 –57.7 1.89 103.8 

0.00605 82.1  0.910  –41.9 

 

 

Summary of Contents for 3SK318

Page 1: ...0 Previous ADE 208 600 Rev 2 00 Aug 10 2005 Features Low noise characteristics NF 1 4 dB typ at f 900 MHz Excellent cross modulation characteristics Capable low voltage operation B 5V Outline 1 Source...

Page 2: ...2 to source breakdown voltage V BR G2SS 6 V IG2 10 A VG1S VDS 0 Gate1 to source cutoff current IG1SS 100 nA VG1S 5 V VG2S VDS 0 Gate2 to source cutoff current IG2SS 100 nA VG2S 5 V VG1S VDS 0 Gate1 to...

Page 3: ...mA Gate1 to Source Voltage VG1S V Drain Current vs Gate1 to Source Voltage VDS 3 5 V 2 0 V 2 5 V 1 5 V VG2S 1 0 V 20 16 12 8 4 0 1 2 3 4 5 Drain Current I D mA Gate2 to Source Voltage VG2S V Drain Cu...

Page 4: ...5 V VG2S 3 V f 900 MHz VG2S 3 V ID 10 mA f 900 MHz 5 4 3 2 1 0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 Noise Figure NF dB Noise Figure vs Drain to Source Voltage Drain to Source Voltage VDS V Power Gain vs...

Page 5: ...0 90 120 150 180 150 90 60 30 120 Scale 0 002 div 0 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Test Condition 50 to 1000 MHz 50...

Page 6: ...75 0 0 983 15 3 400 0 972 24 1 2 28 147 6 0 00533 78 0 0 980 17 4 450 0 969 27 0 2 26 143 6 0 00588 71 6 0 976 19 6 500 0 954 29 7 2 23 140 0 0 00617 69 5 0 971 21 7 550 0 955 32 8 2 19 135 9 0 00666...

Page 7: ...0 0 4 0 35 0 42 0 5 0 15 2 2 1 35 2 4 0 7 L1 0 1 0 5 0 6 0 05 0 05 0 45 0 9 Dimension in Millimeters Reference Symbol Min Nom Max A3 e2 0 6 b2 0 3 b3 0 4 b5 0 55 SC 82A 0 006g MASS Typ CMPAK 4 T CMPA...

Page 8: ...or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances...

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