Table 6: VB
Pin Name
VBAT_RF
VBAT_BB
GND
3.6.2. De
The power
below 3.3V
voltage drop
To decrease
ceramic chi
from an ext
structure. T
should be n
Three ceram
capacitors s
suggested t
power is mo
E
BAT and GN
Pin No
57,58
59,60
8,9,19,
36,46,
48,50~
72, 85~
ecrease Vo
supply rang
V. The follow
p will be less
VBA
Min.3.
e voltage dr
ip (MLCC) c
ternal applic
The width of
no less than
mic capacito
should be pl
that you sh
ore than 0.5W
EC25-A_Us
ND Pins
o.
,22,
~54,56,
~112
oltage Dro
ge of the mo
wing figure s
s in 3G and
AT
3V
Figure 7: P
rop, a bypas
capacitor ca
cation has to
f VBAT_BB
2mm.In prin
ors (100nF,
aced close t
ould use a
W. The follo
ser_ManualC
Description
Power supp
part.
Power supp
baseband p
Ground.
op
odule is from
shows the v
4G network
Transmit
burst
Power Supp
ss capacitor
an provide th
o be a single
trace shoul
nciple, the lo
33pF, 10pF
to the VBAT
zener diode
owing figure
Confidentia
n
ply for modu
ply for modu
part.
m 3.3Vto4.3
voltage drop
ks.
Drop
ply Limits d
r of about 10
he best com
e voltage so
d be no les
ongerthe VB
F) are recom
T pins. In add
e of which
shows the s
al / Release
Mi
le RF
3.3
le
3.3
-
3V. Make su
p during tra
Transmit
burst
during Tran
00µF with lo
mbination of
ource and ex
ss than 1mm
AT trace is,
mmended to
dition, in ord
reverse zen
star structure
d 26 / 6
n.
Typ
3 3.8
3 3.8
0
re the input
ansmitting b
nsmit Burst
ow ESR sho
f low ESR. T
xpanded to
m; andthe w
the wider it
o be applied
er to get a s
ner voltage
e of the pow
L
EC25-AU
69
p.
Max
4.3
4.3
-
t voltage wil
urst in 2G
Ripple
ould be used
The main p
two sub pa
width of VBA
will be.
d to the VBA
stable power
is 5.1V and
wer supply.
LTE Module
ser Manua
.
Unit
V
V
V
l never drop
network.The
d. Multi-laye
ower supply
ths with sta
AT_RF trace
AT pins. The
r source, it is
d dissipation
e
al
p
e
r
y
r
e
e
s
n
All manuals and user guides at all-guides.com
