Philips Semiconductors
Product specification
Logic level TOPFET
PIP3107-D
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Continuous drain source voltage
1
-
-
50
V
I
D
Continuous drain current
V
IS
= 5 V; T
mb
=
25 ˚C
-
self -
A
limited
I
D
Continuous drain current
V
IS
= 5 V; T
mb
≤
125 ˚C
-
16
A
I
I
Continuous input current
-
-5
5
mA
I
IRM
Non-repetitive peak input current
t
p
≤
1 ms
-10
10
mA
P
D
Total power dissipation
T
mb
≤
25 ˚C
-
65
W
T
stg
Storage temperature
-
-55
175
˚C
T
j
Continuous junction temperature
2
normal operation
-
150
˚C
T
sold
Case temperature
during soldering
-
260
˚C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
Ω
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Inductive load turn-off
I
DM
= 16 A; V
DD
≤
20 V
E
DSM
Non-repetitive clamping energy
T
mb
≤
25 ˚C
-
200
mJ
E
DRM
Repetitive clamping energy
T
mb
≤
95 ˚C; f = 250 Hz
-
32
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DS
Drain source voltage
3
4 V
≤
V
IS
≤
5.5 V
0
35
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
Junction to mounting base
-
-
1.75
1.92
K/W
R
th j-a
Junction to ambient
minimum footprint FR4 PCB
-
70
-
K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
October 2001
2
Rev 1.000
