FEDD56V16160F-02
1
Semiconductor
MSM56V16160F
22/31
Read to Write Cycle (Same Bank) @
CAS
CAS
CAS
CAS
Latency=2, Burst Length=4
*Note: 1. In Case
CAS
latency is 3, READ can be interrupted by WRITE.
The minimum command interval is [burst 1] cycles.
UDQM, LDQM must be high at least 3 clocks prior to the write command.
CLK
CKE
CS
RAS
CAS
ADDR
A11
A10
DQ
WE
UDQM,
LDQM
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
Ra
Ca0
Cb0
Ra
Db0 Db1
∗
Note 1
Row Active
Read Command
Write Command
Precharge Command
t
WR
t
RCD
Db2 Db3
Da0
Summary of Contents for CE130/55
Page 8: ...3 BLOCK DIAGRAM ...
Page 9: ...4 WIRING DIAGRAM ...
Page 10: ...5 CIRCUIT DIAGRAM MAIN BOARD ...
Page 11: ...6 CIRCUIT DIAGRAM MAIN BOARD ...
Page 14: ...MAIN PCB COMPONENT LAYOUT TOP SIDE VIEW 9 ...
Page 15: ...MAIN PCB COMPONENT LAYOUT BOTTOM SIDE VIEW 10 ...
Page 16: ...PANEL PCB COMPONENT LAYOUT TOP SIDE VIEW 11 ...
Page 17: ...PANEL PCB COMPONENT LAYOUT BOTTOM VIEW PANEL PCB COMPONENT LAYOUT BOTTOM VIEW 12 ...
Page 18: ...TUNER PCB COMPONENT LAYOUT TOP SIDE VIEW 13 ...
Page 19: ...TUNER PCB COMPONENT LAYOUT BOTTOM IDE S VIEW 14 ...
Page 20: ...SET EXPLODER VIEW DRAWING 15 ...
Page 22: ...BX8804 8805 User s Manual Revision 0 93 May 23 2008 ...
Page 30: ...BX8804 8805 9 21 1 PRODUCT OVERVIEW ...
Page 39: ...BX8804 8805 18 21 20 PACKAGE DIMENSIONS ...
Page 41: ...BX8804 8805 20 21 21 ELECTRICAL CHARACTERISTICS ...