FEDD56V16160F-02
1
Semiconductor
MSM56V16160F
13/31
Page Read & Write Cycle (Same Bank) @
CAS
CAS
CAS
CAS
Latency
====
2, Burst Length=4
*Note: 1. To write data before a burst read ends, UDQM and LDQM should be asserted three cycles prior to the
write command to avoid bus contention.
2. To assert row precharge before a burst write ends, wait t
WR
after the last write data input.
Input data during the precharge input cycle will be masked internally.
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
CLK
CKE
CS
RAS
CAS
ADDR
A11
A10
DQ
WE
UDQM,
LDQM
Read Command
Read Command
Write Command
Write Command
Precharge Command
Qa0 Qa1 Qb0 Qb1
Dc0 Dc1 Dd0
Cc0
Cd0
Ca0
Cb0
t
WR
I
CCD
∗
Note 2
∗
Note 1
Bank A Active
l
OWD
High
Summary of Contents for CE130/55
Page 8: ...3 BLOCK DIAGRAM ...
Page 9: ...4 WIRING DIAGRAM ...
Page 10: ...5 CIRCUIT DIAGRAM MAIN BOARD ...
Page 11: ...6 CIRCUIT DIAGRAM MAIN BOARD ...
Page 14: ...MAIN PCB COMPONENT LAYOUT TOP SIDE VIEW 9 ...
Page 15: ...MAIN PCB COMPONENT LAYOUT BOTTOM SIDE VIEW 10 ...
Page 16: ...PANEL PCB COMPONENT LAYOUT TOP SIDE VIEW 11 ...
Page 17: ...PANEL PCB COMPONENT LAYOUT BOTTOM VIEW PANEL PCB COMPONENT LAYOUT BOTTOM VIEW 12 ...
Page 18: ...TUNER PCB COMPONENT LAYOUT TOP SIDE VIEW 13 ...
Page 19: ...TUNER PCB COMPONENT LAYOUT BOTTOM IDE S VIEW 14 ...
Page 20: ...SET EXPLODER VIEW DRAWING 15 ...
Page 22: ...BX8804 8805 User s Manual Revision 0 93 May 23 2008 ...
Page 30: ...BX8804 8805 9 21 1 PRODUCT OVERVIEW ...
Page 39: ...BX8804 8805 18 21 20 PACKAGE DIMENSIONS ...
Page 41: ...BX8804 8805 20 21 21 ELECTRICAL CHARACTERISTICS ...