3. Short between TP891 and TP892 on the Main circuit board with a
jumper wire. Confirm that the picture goes out of horizontal sync.
4. If this does not occur, the horizontal oscillator disable circuit is
not operating. Follow the Repair Procedures of horizontal
oscillator disable circuit before the set is returned to customer.
REPAIR PROCEDURES OF HORIZONTAL OSCILLATOR DISABLE CIRCUIT
1. Connect a DC voltmeter between capacitor C513 (+) on the Main
circuit board and chassis ground.
2. If approxi21.0 V (For model with 13 inch CRT) or +21.9 V
(For model with 20 inch CRT) is not present at that point when 120
V AC is applied, find the cause. Check R503, R5505, C5507, C513
and D503.
3. Carefully check above specified parts and related circuits and
parts. When the circuit is repaired, try the horizontal oscillator
disable circuit test again.
CIRCUIT EXPLANATION
HORIZONTAL OSCILLATOR DISABLE CIRCUIT
The positive DC voltage, supplied from the D503 cathode for monitoring high voltage, is applied
to the IC5301 Pin11 through R503 and R5504. Under normal conditions, the voltage at IC5301 Pin
11 is less than approx 3 V. If the high voltage at Flyback Tr Pin 5 exceeds the specified voltage,
the positive DC voltage which is supplied from the D503 cathode also increases. The increased
voltage is applied to IC5301 Pin11 through R503 and R5504. Due to the increased voltage at
IC5301 Pin11, the horizontal oscillator frequency increases, the picture goes out of horizontal
sync, the beam current decreases and the picture becomes dark in order to keep X-radiation
under specification.
Figure 2
3. PREVENTION OF ELECTROSTATIC DISCHARGE
(ESD) TO ELECTROSTATICALLY SENSITIVE (ES)
DEVICES
Some semiconductor (solid state) devices can be damaged easily by static electricity. Such
components commonly are called Electrostatically Sensitive (ES) Devices. Examples of typical
ES devices are integrated circuits and some field-effect transistors are semiconductor "chip"
components. The following techniques should be used to help reduce the incidence of
component damage caused by electrostatic discharge (ESD).
6
Summary of Contents for Omnivision PV-C1321
Page 9: ...Fig 1 4 Fig 1 5 9 ...
Page 23: ...5 2 IC TRANSISTOR AND CHIP PART INFORMATION 23 ...
Page 27: ...Fig D4 Fig D5 27 ...
Page 31: ...6 2 2 Inner Parts Location Fig J1 1 31 ...
Page 32: ...6 2 3 EJECT Position Confirmation Fig J1 2 32 ...
Page 33: ...6 2 4 Grounding Plate Unit Full Erase Head and Cylinder Unit Fig J2 1 33 ...
Page 84: ...84 ...
Page 88: ...11 2 MECHANISM BOTTOM SECTION 88 ...
Page 89: ...11 3 CASSETTE UP COMPARTMENT SECTION 89 ...
Page 90: ...11 4 CHASSIS FRAME SECTION 1 90 ...
Page 91: ...11 5 CHASSIS FRAME SECTION 2 91 ...
Page 93: ... Model PV C2011 PV C2021 PV C2031W VV 2001 PV C2061 93 ...
Page 111: ...R4591 ERDS2TJ681T CARBON 1 4W 680 111 ...
Page 113: ...R6009 ERJ6GEYJ102V MGF CHIP 1 10W 1K 113 ...
Page 135: ...R6032 ERJ6GEYJ102V MGF CHIP 1 10W 1K 135 ...
Page 142: ...C3060 ECEA1CKA100 ELECTROLYTIC 16V 10UF 142 ...