Multi Chip Discrete
Publication date: November 2005
SJJ00333AED
1
UP05C8B
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3931
+
CCD load device
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Tr
Collector-base voltage
(Emitter open)
V
CBO
30
V
Collector-emitter voltage
(Base open)
V
CEO
20
V
Emitter-base voltage
(Collector open)
V
EBO
3
V
Collector current
I
C
15
mA
CCD
load
device
Limiting element voltage
V
max
40
V
Limiting element current
I
max
10
mA
Overall
Total power dissipation
*
P
T
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Note) * : Measuring on substrate at 17 mm
×
10 mm
×
1 mm
Marking Symbol: 4F
Internal Connection
3
(G)
(S)
4
1
(E)
2
(B)
(C)
6
(D)
5
Tr
FET
Unit: mm
1: Emitter
4: Source
2: Base
5: Drain
3: Gate
6: Collector
SSMini6-F1 Package
(0.30)
0.10
±
0.02
6
5
4
1
2
3
5
°
5
°
0.20
+0.05
–0.02
1.6
0
±
0.05
0.55
±
0.05
0.10
max
.
0 to 0.0
2
(0.20
)
1.60
±
0.05
1
番ピン端子表示
1.2
0
±
0.05
(0.20
)
1.00
±
0.05
(0.50)(0.50)
