background image

 

UP05C8B

 

SJJ00333AED 

3

 

I

C

 

 V

CE

 

I

C

 

 I

B

 

I

C

 

 V

BE

 

V

CE(sat)

 

 I

C

 

h

FE

 

 I

C

Characteristics charts of Tr

0

4

2

8

10

6

12

0

10

8

12

2

6

4

Collector current  

I

C

  (

mA

)

Collector-emitter voltage  V

CE

  (V)

UP05C8B_I

C

-V

CE

80 

µ

A

40 

µ

A

20 

µ

A

T

a

 

=

 25

°

C

I

B

 

=

 100 

µ

A

60 

µ

A

0.1

1

10

100

0.1

1

0.01

UP05C8B_

V

CE(sat)

-

I

C

Collector

-emitter saturation voltage  

V

CE(sat)

  (V)

Collector current  I

C

  (mA)

I

C

 / I

B

 = 10

T

a

 = 85

°

C

25

°

C

25

°

C

1

10

100

20

120

80

100

60

40

140

0

UP05C8B_

h

FE

-

I

C

Forward current transfer ratio  

h

FE

Collector current  I

C

  (mA)

T

a

 = 85

°

C

25

°

C

25

°

C

0

0.4

0.2

0.8

0.6

1.0

0

35

40

30

45

5

10

20

25

15

Collector current  

I

C

  (

mA

)

Base current  I

B

  (mA)

UP05C8B_I

C

-V

CE

V

CE

 

=

 6 V

0

0.4 0.6

0.2

1.2

0.8 1.0

1.4

0

40

50

10

20

30

Collector current  

I

C

  (

mA

)

Base-emitter voltage  V

BE

  (V)

UP05C8B_I

C

-V

BE

V

CE

 

=

 6 V

T

a

 

=

 85

°

C

25

°

C

25

°

C

 

I

P

 

 V

DS

Characteristics charts of CCD load device

0

4

2

14

10

6

8

12

16

0

3.5

4.0

3.0

4.5

0.5

1.0

2.0

2.5

1.5

Peak current  

I

P

  (

mA

)

Drain-source voltage  V

DS

  (V)

UP05C8B_I

P

-V

DS

V

G

 

=

 0

Summary of Contents for Multi Chip Discrete UP05C8B

Page 1: ...Emitter open VCBO 30 V Collector emitter voltage Base open VCEO 20 V Emitter base voltage Collector open VEBO 3 V Collector current IC 15 mA CCD load device Limiting element voltage Vmax 40 V Limiting element current Imax 10 mA Overall Total power dissipation PT 125 mW Junction temperature Tj 125 C Storage temperature Tstg 55 to 125 C Note Measuring on substrate at 17 mm 10 mm 1 mm Marking Symbol ...

Page 2: ... VCB 6 V IE 1 mA f 200 MHz 640 MHz Noise figure NF VCB 6 V IE 1 mA f 100 MHz 3 3 dB Power gain GP VCB 6 V IE 1 mA f 100 MHz 24 dB Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors CCD Load Device Parameter Symbol Conditions Min Typ Max Unit Pinchi off current IP VDS 10 V VG 0 3 5 5 5 mA Output impedance ZO VDS 10 V VG 0 0 05 MW Note Measur...

Page 3: ...5 C 25 C 1 10 100 20 120 80 100 60 40 140 0 UP05C8B_hFE IC Forward current transfer ratio h FE Collector current IC mA Ta 85 C 25 C 25 C 0 0 4 0 2 0 8 0 6 1 0 0 35 40 30 45 5 10 20 25 15 Collector current I C mA Base current IB mA UP05C8B_IC VCE VCE 6 V 0 0 4 0 6 0 2 1 2 0 8 1 0 1 4 0 40 50 10 20 30 Collector current I C mA Base emitter voltage VBE V UP05C8B_IC VBE VCE 6 V Ta 85 C 25 C 25 C IP VDS...

Page 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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