Specifications
Specification
12 V Operating
Characteristics
3.3 V Operating
Characteristics
3.3 Vaux Operating
Characteristics
Inrush current (typical
peak)
1.5 A
1.5 A
1.5 A
Max average current
2.45 A
3.0 A
1 mA
Related Information
■
Reliability Specifications
The Oracle Flash Accelerator F160 PCIe Card reliability specifications are shown in the
following table:
Specification
Value
Uncorrectable Bit Error
Rate (UBER)
Uncorrectable bit error rate will not exceed one sector in the specified number of bits read.
In the unlikely event of a non-recoverable read error, the storage drive will report it as a
read failure to the host; the sector in error is considered corrupt and is not returned to the
host.
< 1 sector per 10
17
bits read
Mean Time Between
Failures (MTBF)
2 million hours
Mean Time Between Failures is estimated based on Telcordia methodology and
demonstrated through Reliability Demonstration Test (RDT).
Data Retention
The time period for retaining data in the NAND at maximum rated endurance. 3 months
power-off retention once storage drive reaches rated write endurance at 40° C.
Endurance Rating
■ Up to 14 PBW (petabytes written)
Endurance rating verification is defined to establish UBER <1E-16 at 60% upper
confidence limit.
■ 5 Drive Writes/day (JESD219 workload)
The number of drive writes such that the storage drive meets the requirements
according to the JESD219 standard.
Temperature Sensor
Internal temperature sensor with an accuracy of +/-2° C over a range of -10° C to +85° C
which can be monitored using NVMe Health Log.
The sensor has an accuracy of +/- 3° C over a range of -20° C to 125° C. SMBUS
temperature sensor is not reported in NVMe Health Log.
Drive provides out-of-band access to temperature by means of SMBUS.
Out of Band
Management
(SMBUS)
Provides out-of-band management by means of SMBUS interface. This requires 3.3V
auxiliary voltage.
18
Oracle Flash Accelerator F160 PCIe Card User Guide • April 2016
