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EVBUM2822/D

www.onsemi.com

2

TYPICAL APPLICATION SCHEMATIC

Figure 2. Typical Application Schematic of a CrM Totem Pole PFC Utilizing NCP1680

VL

VAC

+

_

NCP51530

HI
LI
COM
LO

VCC

HB

HO

VB

ZCD

SR2

SR1

NCP1680

POLARITY

PWMH

LVSNS1

PFCOK
FB

LVSNS2

PWML

SRH

ZCD

PGND

SKIP

FAULT

VCC

R

AUX

0 V

+400 V

+

+

+

+

+

+

Vac

400

Vac

V

O

V

O

R

LOAD

R

ZCD

AUX
VCC

SRL

SRH

SRL

NCP51820

VDD

VBST

SW

HOSRC

VDDH

HOSNK

LOSRC

VDDL

PGND

LOSNK

HIN

LIN

SG

ND

EN

DT

S1

S2

VCC

GND

VCC

As shown in Figure 2, the slow leg switches (SR1 & SR2)

are high voltage silicon

based FETs, also known as super

junction (SJ) FETs, and the fast leg switches (S1 & S2) are
Enhancement

mode Gallium Nitride (eGaN) devices. Since

NCP1680 employs a CrM control architecture where the
inductor current resets back to zero before the next
switching cycle, low reverse recovery charge (Qrr) SJ FETs
can also be utilized for the fast leg albeit with slightly
inferior performance, but better cost structure. As
a controller the NCP1680 is agnostic to the fast leg switch
technology. Wide

Bandgap (WBG) devices such as Silicon

Carbide (SiC) or eGaN are recommended for optimal
performance. SiC is a good choice for lower frequency
applications while eGaN is an excellent choice for both low
frequency and high frequency applications.

The NCP1680 evaluation board is designed such that

engineers interested in this novel topology can easily probe

various signals and learn the intricacies of TPFC. The fast
leg half bridge is implemented on a daughter card where the
fast leg switches are driven using NCP51820, a high voltage
eGaN half

bridge driver; the slow leg switches are driven

using NCP51530, a high voltage Si FET half

bridge driver.

The NCP1680 employs a novel current limit scheme where
a simple resistor placed in the return path between bulk
ground and the IC ground, is utilized for current limiting.
The Zero Current Detection (ZCD) resistor is further
utilized for drive control of the synchronous switch in the
fast leg.

Additionally, the NCP1680 requires only a single

auxiliary winding to sense switch node valleys (in positive
half

line cycle) and switch node peaks (in negative half line

cycle). This novel scheme results in the main boost switch
being turned on with minimal voltage across the switch
improving efficiency and reducing EMI.

Summary of Contents for NCP1680

Page 1: ...totem pole PFC built using NCP1680 NCP1680 is intended for Industrial power supplies Telecom 5G Networking power USB PD Gaming consoles UHD TV power supplies and Lighting applications TPFC topology el...

Page 2: ...Silicon Carbide SiC or eGaN are recommended for optimal performance SiC is a good choice for lower frequency applications while eGaN is an excellent choice for both low frequency and high frequency a...

Page 3: ...it disables the controller A VCC voltage greater than 20 V will trip the EVB over voltage protection OVP and latch off the controller J6 AC Input connector is pinned out for a 3 wire AC input connecti...

Page 4: ...note the following test set up is recommended For higher power measurements 10 load always arrange the connection so that the voltmeters at input and output are as close to NCP1680 evaluation board UU...

Page 5: ...EVBUM2822 D www onsemi com 5 PERFORMANCE CHARACTERISTICS DATA AND WAVEFORMS Efficiency Figure 5 Efficiency vs Output Power Power Factor Figure 6 Power Factor vs Output Power...

Page 6: ...EVBUM2822 D www onsemi com 6 Total Harmonic Distortion Figure 7 THD vs Output Power Switching Frequency at the Peak of AC Line vs Output Power Figure 8 Switching Frequency vs Output Power...

Page 7: ...re 10 Load Transient 10 to 100 Load Step 100 to 10 Load Step In the above waveforms NCP1680 s dynamic response enhancer DRE limits the lower bulk voltage to 367 V while the output overvoltage protecti...

Page 8: ...erter For the NCP1680 motherboard additional circuitry shown in Figure 12 has been designed in to allow the user to easily transition the EVB into the Skip Stanbdy mode without the use of a downstream...

Page 9: ...of hysteretic control meaning that the bulk voltage will cycle between its nominal regulation voltage and 94 of nominal regulation The frequency at which the bulk voltage cycles will be dependent on t...

Page 10: ...stable and robust operation of the application Verification of the control loop characteristics is a good practice for any power supply design The NCP1680 motherboard provides a 1 kW injection resist...

Page 11: ...ironment with no external air flow The high efficiency performance of the TPFC is evident in the device temperatures where the fast and slow leg switches measure below 60 C a modest 35 C rise above ro...

Page 12: ...EVBUM2822 D www onsemi com 12 MOTHERBOARD PCB ARTWORK Figure 17 Motherboard PCB Part 1 3...

Page 13: ...EVBUM2822 D www onsemi com 13 MOTHERBOARD PCB ARTWORK Continued Figure 18 Motherboard PCB Part 2 3...

Page 14: ...EVBUM2822 D www onsemi com 14 MOTHERBOARD PCB ARTWORK Continued Figure 19 Motherboard PCB Part 3 3...

Page 15: ...EVBUM2822 D www onsemi com 15 DAUGHTERBOARD PCB ARTWORK Figure 20 Daughterboard PCB Part 1 2...

Page 16: ...EVBUM2822 D www onsemi com 16 DAUGHTERBOARD PCB ARTWORK Continued Figure 21 Daughterboard PCB Part 2 2...

Page 17: ...EVBUM2822 D www onsemi com 17 TRANSFORMER DATA SHEET Figure 22 Transformer Data Sheet...

Page 18: ...EVBUM2822 D www onsemi com 18 SCHEMATIC Motherboard Control Section Figure 23 Motherboard Control Section Motherboard Power Train Figure 24 Motherboard Power Train...

Page 19: ...EVBUM2822 D www onsemi com 19 Daughter Card Figure 25 Daughter Card...

Page 20: ...No 13 2 C12 13 1 nF CAP CER 1 nF 630 V X7R 1206 Yageo CC1206KKX7RZBB102 1206 Yes 14 2 C16 C18 100 mF CAP ALUM 100 mF 20 450 V Rad 18 x 40 mm United Chemi Con EKXG451ELL101MM40S Round Radial Yes 15 2 C...

Page 21: ...1 Q2 Transistor PNP 40 V 200 mA onsemi MMBT3906 SOT 23 Yes 41 2 Q1 Q3 Transistor NPN 40 V 200 mA onsemi MMBT3904LT1G SOT 23 Yes 42 1 R1 10 kW RES 10 kW 1 1 8 W 0603 Stackpole RNCP0603FTD10K0 603 Yes 4...

Page 22: ...805 No 62 1 RT2 DNP Thermistor NTC 10 W 3 7A TDK B57237S0100M000 Thru Hole No 63 1 RT3 Vairistor Disc 470 V 4 5 kA Littlefuse V300LA20AP Thru Hole No 64 1 S1 Switch Mom 32 V 50 mA SMD C K KMR221GLFS S...

Page 23: ...CERAMIC 0 V NPO Murata GRM1555C1H470JA01D 402 Yes 9 1 D1 ES1J DIODE FAST REC 1 A 600 V onsemi ES1J SMA No 10 1 J1 Conn Edge Etch Mate to TE1761426 3 Goldfinger TE Connectivity 1761426 3_MATE PCB No 11...

Page 24: ...support systems or any FDA Class 3 medical devices or medical devices with a similar or equivalent classification in a foreign jurisdiction or any devices intended for implantation in the human body Y...

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