2001 Nov 02
2
NXP Semiconductors
Product specification
860 MHz, 17 dB gain power doubler
amplifier
BGD885
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN
DESCRIPTION
1
input
2, 3, 5, 6, 7
common
4
10 V, 200 mA supply terminal
8
+V
B
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
4
6
3
5
1
Side view
MBK049
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
16.5
17.5
dB
I
tot
total current consumption (DC)
V
B
= 24 V
450
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
DC supply voltage
26
V
V
i
RF input voltage
65
dBmV
T
stg
storage temperature
40
+100
C
T
mb
operating mounting base temperature
20
+100
C
