NXP Semiconductors BGA2712, Datasheet

Page: 6 / 12

2002 Sep 10 6
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2712
handbook, halfpage
0 1000
f (MHz)
2000 4000
0
−
50
−
10
3000
−
20
−
30
−
40
MLD906
s12
2
(dB)
Fig.9 Isolation (

s
12

2
) as a function of frequency;
typical values.
I
S
= 12.3 mA; V
S
= 5 V; P
D
=

30 dBm; Z
O
= 50

handbook, halfpage
0
f (MHz)
(1)
(2)
(3)
25
20
15
10
1000 2000 4000 3000
MLD907
s21
2
(dB)
Fig.10 Insertion gain (

s
21

2
) as a function of
frequency; typical values.
P
D
=

30 dBm; Z
O
= 50

(1) I
S
= 15.1 mA; V
S
= 5.5 V.
(2) I
S
= 12.3 mA; V
S
= 5 V.
(3) I
S
= 10.1 mA; V
S
= 4.5 V.
handbook, halfpage
−
30
−
20
PD (dBm)
PL
(dBm)
0
(1)
(2)
(3)
10
5
−
5
−
10
0
−
10
MLD908
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; Z
O
= 50

(1) V
S
= 5.5 V.
(2) V
S
= 5 V.
(3) V
S
= 4.5 V.
handbook, halfpage
−
30
−
20
PD (dBm)
PL
(dBm)
0
(1)
(2)
(3)
10
5
−
5
−
10
0
−
10
MLD909
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
f = 2.2 GHz; Z
O
= 50

(1) V
S
= 5.5 V.
(2) V
S
= 5 V.
(3) V
S
= 4.5 V.