2002 Sep 10
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
FEATURES
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3
(out)
at 1 GHz)
Unconditionally stable (K > 1.5).
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
V
S
2, 5
GND2
3
RF out
4
GND1
6
RF in
MAM455
1
3
2
4
1
6
3
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code:
E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
5
6
V
I
S
DC supply current
12.3
mA
s
21
2
insertion power gain
f = 1 GHz
21.3
dB
NF
noise figure
f = 1 GHz
3.9
dB
P
L(sat)
saturated load power
f = 1 GHz
4.8
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
6
V
I
S
supply current
35
mA
P
tot
total power dissipation
T
s
90
C
200
mW
T
stg
storage temperature
65
+150
C
T
j
operating junction temperature
150
C
P
D
maximum drive power
10
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
