2002 Sep 10
3
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
S
= 5 V; I
S
= 12.3 mA; T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
s
90
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
9
12.3
15
mA
s
21
2
insertion power gain
f = 100 MHz
20
20.8
22
dB
f = 1 GHz
20
21.3
22
dB
f = 1.8 GHz
20
22
23
dB
f = 2.2 GHz
20
22
23
dB
f = 2.6 GHz
19
21.2
22
dB
f = 3 GHz
16
19.3
21
dB
R
L IN
return losses input
f = 1 GHz
12
14
dB
f = 2.2 GHz
8
10
dB
R
L OUT
return losses output
f = 1 GHz
17
20
dB
f = 2.2 GHz
15
18
dB
s
12
2
isolation
f = 1.6 GHz
31
33
dB
f = 2.2 GHz
36
39
dB
NF
noise figure
f = 1 GHz
3.9
4.3
dB
f = 2.2 GHz
4.3
4.7
dB
BW
bandwidth
at
s
21
2
3 dB below flat gain at 1 GHz 2.8
3.2
GHz
K
stability factor
f = 1 GHz
1.5
2
f = 2.2 GHz
2.5
3
P
L(sat)
saturated load power
f = 1 GHz
3
4.8
dBm
f = 2.2 GHz
0
1.3
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
2
0.2
dBm
at 1 dB gain compression; f = 2.2 GHz
4
2
dBm
IP3
(in)
input intercept point
f = 1 GHz
12
10
dBm
f = 2.2 GHz
14
16
dBm
IP3
(out)
output intercept point
f = 1 GHz
9
11
dBm
f = 2.2 GHz
4
6
dBm
