AN10881
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© NXP B.V. 2011. All rights reserved.
Application note
Rev. 2 — 26 September 2011
30 of 102
NXP Semiconductors
AN10881
TEA1713 resonant power supply control IC with PFC
6. MOSFET
drivers
GATEPFC, GATELS and GATEHS
The TEA1713 provides three outputs for driving external high-voltage power MOSFETs:
•
GATEPFC for driving the PFC MOSFET
•
GATELS for driving the low side of the HBC MOSFET
•
GATEHS for driving the low side of the HBC MOSFET
6.1 GATEPFC
The TEA1713 has a strong output stage for PFC to drive a high-voltage power MOSFET.
It is supplied by the fixed voltage from SUPREG = 10.9 V.
6.2 GATELS and GATEHS
Both drivers have identical driving capabilities for the gate of an external high-voltage
power MOSFET. The low-side driver is referenced to pin PGND and is supplied from
SUPREG. The high-side driver is floating, referenced to HB, the connection to the
midpoint of the external half-bridge. The high-side driver is supplied by a capacitor on
SUPHS that is supplied by an external bootstrap function by SUPREG. The bootstrap
diode charges the capacitor on SUPHS when the low-side MOSFET is on.
Both HBC drivers have a strong current source capability and an extra strong current sink
capability. In general operation of the HBC, fast switch-on of the external MOSFET is not
critical, as the HB node swings automatically to the correct state after switch-off. Fast
switch off however, is important to limit switching losses and prevent delay especially at
high frequency.
6.3 Supply voltage and power consumption
See
and
.for a description of the supply voltages and power
consumption by the MOSFET drivers.
Fig 13. GATELS and GATEHS drivers
001aal024
14 SUPHS
GATEHS
GATELS
15 HB
9 SUPREG
V
BOOST
TEA1713
