NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
The A3M34SL039 is a fully integrated Doherty power amplifier module
designed for wireless infrastructure applications that demand high
performance in the smallest footprint. Ideal for applications in massive MIMO
systems, outdoor small cells and low power remote radio heads. The field-
proven LDMOS power amplifiers are designed for TDD LTE and 5G systems.
The module integrates an autobias feature with the option to overwrite
production settings. Autobias automatically sets and regulates transistor bias
over temperature upon power up. An integrated sensor for monitoring
temperature is also present. Communications to the module can be
accomplished via either I
2
C or SPI.
3300–3700 MHz
Typical LTE Performance: P
out
= 8 W Avg., V
DD
= 29 Vdc, 1 × 20 MHz LTE,
Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.
1
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
3310 MHz
29.9
–28.0
33.2
3500 MHz
29.6
–31.6
37.1
3690 MHz
29.1
–29.6
35.0
1. All data measured with device soldered in NXP reference circuit.
Features
• Advanced high performance in-package Doherty
• Fully matched (50 ohm input/output, DC blocked)
• Designed for low complexity digital linearization systems
• Autobias on power up
• Temperature sensing
• Digital interface (I
2
C or SPI)
• Embedded registers and DACs for setting bias conditions
• Tx Enable control pin for TDD operation
A3M34SL039I
A3M34SL039S
3300–3700 MHz, 29 dB,
8 W Avg. Airfast Power
Amplifier Module with
Autobias Control
10 mm × 8 mm Module
A3M34SL039
Airfast Power Amplifier Module with Autobias Control
Rev. 0 — September 2022
Data Sheet: Technical Data
