Linear ANALOG DEVICES DC2732A-A, Manual

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55
DEMO MANUAL DC2732A
Rev. 0
CALCULATE Y
ISO
– FROM CASE II:
SIMULATION WITH SWITCH LEAKAGE ERROR
Table: Error of Isolation Resistance Measurement (IDSS = 10μA, Rd = 38k)
Error of R
iso–
Measurement Error of R
iso+
Measurement
2.50E+05 1.00E+06 5.00E+06 1.00E+07 2.50E+05 1.00E+06 5.00E+06 1.00E+07
2.50E+05 –2% –2% –3% –3% 2.50E+05 –3% –2% –2% –2%
1.00E+06 –2% –2% –2% –2% 1.00E+06 –3% –3% –3% –3%
5.00E+06 –2% –2% –2% –2% 5.00E+06 –6% –5% –5% –5%
1.00E+07 –2% –2% –2% –2% 1.00E+07 –10% –9% –8% –8%
Table: Error of Isolation Resistance Measurement (IDSS = 50μA, Rd = 10k)
Error of R
iso–
Measurement Error of R
iso+
Measurement
R
iso±
2.50E+05 1.00E+06 5.00E+06 1.00E+07 R
iso±
2.50E+05 1.00E+06 5.00E+06 1.00E+07
2.50E+05 –10% –10% –10% –10% 2.50E+05 –10% –9% –10% –11%
1.00E+06 –12% –11% –11% –11% 1.00E+06 –9% –8% –8% –9%
5.00E+06 –23% –21% –21% –21% 5.00E+06 –8% –8% –8% –8%
1.00E+07 –33% –31% –31% –31% 1.00E+07 –8% –8% –8% –8%
For more details please contact Analog Devices.
VxI
BAT
V1I
VxII
V1II
BAT1
{BAT}
R
iso+
{Risp}
R
iso–
{Risn}
Ra
{Rp*(1-p)}
Rb
{Rp*p}
Rc
{Rn*(1-n)}
Rd
{Rn*n}
R
iso1+
{Risp}
R
iso1–
{Risn}
Ra1
{Rp*(1-p)}
Rb1
{Rp*p}
Rc1
{Rn*(1-n)}
Rd1
{Rn*n}
{BAT}
TBL(0 0 1000 {IDSS})
I1
Chassis Chassis
Switch closed Switch open
Note: Typical Rn = Rp, p = 0.5. Due to tolerances the real values might
be different and could be calibrated as shown in the example values above.
IDSS: MOSFET Zero gate voltage drain current (VGS = 0), e.g. STD4NK100Z 50μA@125dC
Opt. Switch Leakage
APPENDIX D: MEASURE HALL SENSOR WITH DC2732A_BASIC