3. TECHNICAL BRIEF
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LGE Internal Use Only
Copyright © 2011 LG Electronics. Inc. All right reserved.
Only for training and service purposes
The chip supports CE don't care function. This function allows the direct download of the code from the
NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with
multiple memories the R/B pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the H27S1G6F2B Series extended reliability of 100 K
program/ erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
The copy back function allows the optimization of defective blocks management: when a page program
operation fails the data can be directly programmed in another page inside the same array section without
the time consuming serial data insertion phase. Data read out after copy back read is allowed
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
NAND
Figure. 3.7.2 NAND Part Block Diagram