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LGE Internal Use Only
Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3. TECHNICAL BRIEF
Figure 37. PA Module
Table 10 PAM pin description
PIN
Name
Description
1
MODE
GMSK/EDGE Power control mode. L=GMSK, H=EDGE
2
DCS/PCS_IN
RF input(DCS/PCS) DC Blocked
3 BS
Band
Select
4 REVD1
Reserved
5 VBATT
DC
Supply
6 VRAMP
Analog PA Bias Control(All Bands, EDGE Mode)
Analog Output Power Control(All Bands, GMSK Mode)
7
GSM_IN
RF input(EGSM) DC Blocked
9
GSM_OUT
RF Output(EGSM) DC Blocked
10,11 GND
Ground
12 REVD2
Reserved
13,14,15 GND
Ground
16
DCS/PCS_OUT
RF Output(DCS/PCS) DC Blocked
Pad
GND PAD GRID
Ground pad grid is device underside.
3.25. Power Amplifier Module
3.26. Mode Selection
MODE circuitry selects GMSK modulation (logic 0) or EDGE modulation (logic 1).
VRAMP controls the output power for GMSK modulation and provides bias optimization
for EDGE modulation depending on the state of MODE control.
NA
L503
1
R511
1
R514
3
BS
BY_CAP1
13
9
BY_CAP2
DCS_PCS_IN
1
12
DCS_PCS_OUT
GND1
14
11
GND2
8
GND3
GSM850_900_IN
7
GSM850_900_OUT
10
MODE_SELECT
2
PGND
15
6
TX_EN
VBATT
4
VRAMP
5
TQM7M5005
U501
VBAT
100p
C523
DNI
L504
100p
C507
R516
4.7nH
1
R509
1
R513
27p
C521
1000p
C520
R512
1.2K
22u
C506
C524
820p
C522
100p
TXLB
TXHB
PA_EN
PA_MODE
TX_RAMP
PA_BAND