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3. TECHNICAL BRIEF
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3. TECHNICAL BRIEF
At 108MHz, the device provides an 7ns burst access time and 70ns initial access time. The device
performs a program operation in units of 16bits (Word) and an erase operation in units of a block. Single
or multiple blocks can be erased. The block erase operation is completed within typically 0.7sec. The
device requires 15mA as program/erase current in the extended temperature ranges.
SAMSUNG’s UtRAM products are designed to meet the request from the customers who want to cope
with the fast growing mobile applications that need high-speed random access memory. UtRAM is the
solution for the mobile market with its low cost, high density and high performance feature. device is
fabricated by SAMSUNG
ː
s advanced CMOS technology using one transistor memory cell. The device
supports the traditional SRAM like asynchronous operation (asynchronous read and asynchronous write),
the NOR flash like synchronous operation (synchronous burst read and asynchronous write) and the fully
synchronous operation (synchronous burst read and synchronous burst write). These operation modes
are defined through the configuration register setting. It supports the special features for the standby
power saving. Those are the PAR(Partial Array Refresh) mode, DPD(Deep Power Down) mode and
internal TCSR(Temperature Compensated Self Refresh). It also supports variable and fixed latency, driver
strength settings, Burst sequence (wrap or No-wrap) options and a device ID register (DIDR).
The K5N3217ATA is suitable for use in data memory of mobile communication system to reduce not only
mount area but also power consumption.
This device is available in 52-ball FBGA Type.
