Application Note
12
Revision 1.0
2017-11-15
1200V HighSpeed 3 IGBT in TO-247PLUS Evaluation Board
User Manual
Usage
and current. Measuring the current and voltage waveforms of the devices on the oscilloscope gives an
impression of the switching behavior and allows a calculation of the switching losses. In order to
maximize the accuracy and minimize the effort, it is recommended to make oscilloscope measurements
on the low side device S
2
: use configuration (1) to study the IGBT and configuration (2) to study the
diode behavior. More detailed information on this mode of operation can be found in section 3.2.2.
Configuration (3) and (4) correspond to a buck and a boost converter, respectively. Since these
configurations are actually processing power in a continuous manner, both the heat sink and the inductor
need to meet the individual voltage, power and switching frequency requirements. It is straightforward to
replace those components with appropriate custom solutions. Refer to section 3.2.3 for more detailed
information on how to use the board in this mode of operation.
Table 3
Board configurations for switching loss measurements and continuous operation
(4
)
Bo
o
s
t
Con
v
e
rt
e
r
Switch S2
Diode S1
T
S1
, T
S2
,
T
heatsink
,
η,
V
CE
and
V
GE
waveforms,
…
V
DC
/ (1-d)
f
sw
P
out
V
GE(on)
V
GE(off)
R
G
Package
< 900V
1
-
-
5
0/-5V
12- 20V
-
TO-247x-3/4
4
Do not operate a boost converter without a load!
Ensure that the DC link voltage does not exceed 900V!
1
Limited by the ceramic DC link capacitors C201 and C202 on the bottom side of the PCB.
2
Not a hard limit due to the soft saturation behavior of the inductor core.
3
Limited by the maximum temperature of the power resistor.
4
TO-247x-3/4 refers to TO-247 and TO-247PLUS as well as TO-247 4pin and TO-247PLUS 4pin packages.
5
Limit depends on the device selection and the cooling performance.
Conf.
DUTs
Results
Parameters and limits
Simplified circuit drawing
(1
)
Swit
c
h
in
g
Ce
ll
(S
wi
tch
ch
a
ra
cte
rizat
io
n
)
Switch S2
Diode S1
V
CE
, I
C
and
V
GE
waveforms,
E
on
, E
off
,
Q
rr
, I
rrm
,
V
CE(peak)
dv/dt, di/dt,
…
V
CE
I
C
T
C
V
GE(on)
V
GE(off)
R
G
Package
< 900V
1
< 150A
2
< 150°C
3
0/-5V
12- 20V
-
TO-247x-3/4
4
(2
)
Swit
c
h
in
g
Ce
ll
(Di
o
d
e
c
h
a
ra
ct
e
riz
a
tio
n
)
Diode S2
Switch S1
V
CE
, I
C
and
V
GE
waveforms,
E
rec
Q
rr
,
I
rrm
, dv/dt,
di/dt, …
V
CE
I
C
T
C
V
GE(on)
V
GE(off)
R
G
Package
< 900V
1
< 150A
2
< 150°C
3
0/-5V
12- 20V
-
TO-247x-3/4
4
(3
)
Bu
c
k
Co
n
v
e
rt
e
r
Switch S1
Diode S2
T
S1
, T
S2
,
T
heatsink
, η,
V
CE
and
V
GE
waveforms,
…
V
DC
f
sw
P
out
V
GE(on)
V
GE(off)
R
G
Package
< 900V
1
-
-
5
0/-5V
12- 20V
-
TO-247x-3/4
4