User Guide EVAL-1ED020I12F2-DB
25 of 28
v1.0
2021-06-21
EVAL-1ED020I12F2-DB user guide
Isolated driver daughter board to evaluate 1200 V CoolSiC™ MOSFET
Fehler! Verwenden Sie die Registerkarte 'Start', um Heading 1;Heading1 dem Text
zuzuweisen, der hier angezeigt werden soll.
Figure 18
Short ciruit measurement at high-side configuration
The measurement results shown in Figure 18 are similar to result in Chapter 4.1.2, Figure 16. The difference is
that the phase voltage
V
_Phase
increases from zero up to approximat 620 V when Q1 is switched on. Due to the
steep rise and the high value of the current, the full DC voltage of 800 V is not reached. Shortly after the
increase, the phase voltage drops down again due to the very high current value. Similar to the low-side
measurement, the value of the current drops slightly due to the heating of the power switch, in this
configuration SiC MOSFET Q1.
After approximately 760 ns, the output of the driver switches off.